NDP410BE

更新时间： 2024-09-19 22:29:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管局域网
页数	文件大小	规格书
6页	76K
描述
N-Channel Enhancement Mode Field Effect Transistor

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NDP410BE 数据手册

May 1994

NDP410A / NDP410AE / NDP410B / NDP410BE

NDB410A / NDB410AE / NDB410B / NDB410BE

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

These N-channel enhancement mode power field

effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process has been especially

tailored to minimize on-state resistance, provide

superior switching performance, and withstand high

energy pulses in the avalanche and commutation

modes. These devices are particularly suited for low

voltage applications such as automotive, DC/DC

converters, PWM motor controls, and other battery

powered circuits where fast switching, low in-line

power loss, and resistance to transients are needed.

9 and 8A, 100V. R_DS(ON)= 0.25 and 0.30W.

Critical DC electrical parameters specified at

elevated temperature.

Rugged internal source-drain diode can eliminate

the need for an external Zener diode transient

suppressor.

175°C maximum junction temperature rating.

High density cell design (3 million/in²) for extremely

low R_DS(ON)

TO-220 and TO-263 (D²PAK) package for both

through hole and surface mount applications.

_____________________________________________________________________

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

NDP410A NDP410AE

NDB410A NDB410AE

NDP410B NDP410BE

NDB410B NDB410BE

Symbol Parameter

Units

V_DSS

V_DGR

V_GSS

Drain-Source Voltage

100

±20

±40

Drain-Gate Voltage (R_GS< 1 MW)

Gate-Source Voltage - Continuous

- Nonrepetitive (t_P< 50 ms)

Drain Current - Continuous

- Pulsed

I_D

P_D

Total Power Dissipation @ T_C= 25°C

Derate above 25°C

0.33

W/°C

°C

T_J,T_STGOperating and Storage Temperature Range

-65 to 175

275

T_L

Maximum lead temperature for soldering

purposes, 1/8" from case for 5 seconds

°C

NDP410.SAM

12 3 4 5 6

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