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NDFPD1N150CG PDF预览

NDFPD1N150CG

更新时间: 2024-02-08 18:51:02
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 351K
描述
N-Channel Power MOSFET

NDFPD1N150CG 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:16 weeks风险等级:1.53
JESD-609代码:e3端子面层:Tin (Sn)
Base Number Matches:1

NDFPD1N150CG 数据手册

 浏览型号NDFPD1N150CG的Datasheet PDF文件第2页浏览型号NDFPD1N150CG的Datasheet PDF文件第3页浏览型号NDFPD1N150CG的Datasheet PDF文件第4页浏览型号NDFPD1N150CG的Datasheet PDF文件第5页 
Ordering number : ENA2236  
NDFPD1N150C  
N-Channel Power MOSFET  
1500V, 0.1A, 150, TO-220F-3FS  
http://onsemi.com  
Features  
On-resistance R (on)=100(typ.)  
DS  
Input Capacitance Ciss=80pF(typ.)  
10V drive  
Specifications  
TO-220F-3FS  
Absolute Maximum Ratings at Ta = 25°C  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
DSS  
1500  
30  
V
GSS  
V
I
I
0.1  
0.2  
2.0  
20  
A
D
Drain Current (Pulse)  
PW10μs, duty cycle1%  
A
DP  
W
W
°C  
°C  
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Storage Temperature  
Tch  
150  
Tstg  
- 55 to +150  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Electrical Characteristics at Ta = 25°C  
Ratings  
Parameter  
Symbol  
Conditions  
Unit  
min  
typ  
max  
Drain to Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate to Source Leakage Current  
Cutoff Voltage  
V(  
)
I
=10mA, V =0V  
1500  
V
mA  
nA  
V
BR DSS  
D
GS  
I
I
V
V
V
V
=1200V, V =0V  
1
DSS  
GSS  
(off)  
DS  
GS  
DS  
DS  
GS  
=±30V, V =0V  
DS  
100  
4
V
=10V, I =1mA  
2
GS  
| yfs |  
(on)  
D
Forward Transfer Admittance  
Static Drain to Source On-State Resistance  
Input Capacitance  
=20V, I =50mA  
0.1  
S
D
R
I
=50mA, V =10V  
D GS  
100  
80  
9
150  
Ω
DS  
Ciss  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Output Capacitance  
Coss  
Crss  
V
=30V, f=1MHz  
DS  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
2.5  
8
t (on)  
d
Rise Time  
t
13  
43  
280  
4.2  
0.7  
2
r
See Fig.1  
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
t
f
Total Gate Charge  
Qg  
Gate to Source Charge  
Gate to Drain “Miller” Charge  
Diode Forward Voltage  
Qgs  
Qgd  
V
=200V, V =10V, I =0.1A  
DS GS  
D
V
SD  
I =0.1A, V =0V  
GS  
0.8  
1.5  
S
ORDERING INFORMATION  
See detailed ordering and shipping information on page 4 of this data sheet.  
Semiconductor Components Industries, LLC, 2013  
November, 2013  
N1313 TKIM TC-00003052 No. A2236-1/5  

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