生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.76 | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 3 A |
最大漏源导通电阻: | 0.06 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 0.9 W |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDH8301N/S62Z | TI |
获取价格 |
3000mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDH8301NL99Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-o | |
NDH8301NS62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-o | |
NDH8301NX | TI |
获取价格 |
3000mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDH8302P | ETC |
获取价格 |
TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 20V V(BR)DSS | 2A I(D) | SO | |
NDH8302P/L86Z | TI |
获取价格 |
2000mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDH8302P/L99Z | TI |
获取价格 |
2000mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDH8302PD84Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-o | |
NDH8302PL86Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-o | |
NDH8302PL99Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-o |