NDB508AE

更新时间： 2024-11-24 22:29:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
6页	76K
描述
N-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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数据手册

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NDB508AE 数据手册

May 1994

NDP508A / NDP508AE / NDP508B / NDP508BE

NDB508A / NDB508AE / NDB508B / NDB508BE

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

These N-channel enhancement mode power field

effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process has been especially

tailored to minimize on-state resistance, provide

superior switching performance, and withstand high

energy pulses in the avalanche and commutation

modes. These devices are particularly suited for low

voltage applications such as automotive, DC/DC

converters, PWM motor controls, and other battery

powered circuits where fast switching, low in-line

power loss, and resistance to transients are needed.

19 and 17A, 80V. R_DS(ON)= 0.08 and 0.10W.

Critical DC electrical parameters specified at

elevated temperature.

Rugged internal source-drain diode can eliminate

the need for an external Zener diode transient

suppressor.

175°C maximum junction temperature rating.

High density cell design (3 million/in²) for extremely

low R_DS(ON)

TO-220 and TO-263 (D²PAK) package for both

through hole and surface mount applications.

_____________________________________________________________________

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

NDP508A NDP508AE

NDB508A NDB508AE

NDP508B NDP508BE

NDB508B NDB508BE

Symbol Parameter

Units

V_DSS

V_DGR

V_GSS

Drain-Source Voltage

Drain-Gate Voltage (R_GS< 1 MW)

Gate-Source Voltage - Continuous

±20

±40

- Nonrepetitive (t_P< 50 ms)

Drain Current - Continuous

- Pulsed

I_D

P_D

Total Power Dissipation @ T_C= 25°C

Derate above 25°C

0.5

W/°C

°C

T_J,T_STGOperating and Storage Temperature Range

-65 to 175

275

T_L

Maximum lead temperature for soldering

purposes, 1/8" from case for 5 seconds

°C

NDP508.SAM

12 3 4 5 6

中文翻译

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与NDB508AE相关器件

型号	品牌	获取价格	描述	数据表
NDB508AE/L86Z	TI	获取价格	19A, 80V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
NDB508AEL	TI	获取价格	19A, 80V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
NDB508AEL/L86Z	TI	获取价格	19A, 80V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
NDB508AEL86Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 19A I(D), 80V, 0.08ohm, 1-Element, N-Channel, Silicon, Meta
NDB508AL	TI	获取价格	19A, 80V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
NDB508AL/L86Z	TI	获取价格	19A, 80V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
NDB508AL86Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 19A I(D), 80V, 0.08ohm, 1-Element, N-Channel, Silicon, Meta
NDB508B	FAIRCHILD	获取价格	N-Channel Enhancement Mode Field Effect Transistor
NDB508BE	FAIRCHILD	获取价格	N-Channel Enhancement Mode Field Effect Transistor
NDB508BEL/L86Z	TI	获取价格	17A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB