Datasheet > NCV57000D

NCV57000D

更新时间： 2024-09-27 02:52:47

品牌	Logo	应用领域
安森美 - ONSEMI		栅双极性晶体管
页数	文件大小	规格书
14页	230K
描述
Isolated High Current IGBT Gate Driver

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NCV57000D 数据手册

NCV57000

Isolated High Current IGBT

Gate Driver

NCV57000 is a high−current single channel IGBT driver with

internal galvanic isolation, designed for high system efficiency and

reliability in high power applications. Its features include

complementary inputs, open drain FAULT and Ready outputs, active

Miller clamp, accurate UVLOs, DESAT protection, soft turn−off at

DESAT, and separate high and low (OUTH and OUTL) driver outputs

for system design convenience. NCV57000 accommodates both 5 V

and 3.3 V signals on the input side and wide bias voltage range on the

driver side including negative voltage capability. NCV57000 provides

www.onsemi.com

> 5 kVrms (UL1577 rating) galvanic isolation and > 1200 V

iorm

SOIC−16 WB

CASE 751G−03

(working voltage) capabilities. NCV57000 is available in the

wide−body SOIC−16 package with guaranteed 8 mm creepage

distance between input and output to fulfill reinforced safety

insulation requirements.

MARKING DIAGRAM

Features

• High Current Output (+4/−6 A) at IGBT Miller Plateau Voltages

• Low Output Impedance for Enhanced IGBT Driving

• Short Propagation Delays with Accurate Matching

• Active Miller Clamp to Prevent Spurious Gate Turn−on

• DESAT Protection with Programmable Delay

• Negative Voltage (Down to −9 V) Capability for DESAT

• Soft Turn Off During IGBT Short Circuit

XXXXXXXXXXX

AWLYYWWG

XXXXX = Specific Device Code

= Assembly Location

= Wafer Lot

= Year

= Work Week

= Pb−Free Package

• IGBT Gate Clamping During Short Circuit

• IGBT Gate Active Pull Down

• Tight UVLO Thresholds for Bias Flexibility

• Wide Bias Voltage Range including Negative VEE2

• 3.3 V to 5 V Input Supply Voltage

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present.

• Designed for AEC−Q100 Certification

PIN ASSIGNMENT

• 5000 V Galvanic Isolation (to meet UL1577 Requirements)

• 1200 V Working Voltage (per VDE0884−11 Requirements)

• High Transient Immunity

• High Electromagnetic Immunity

• These Devices are Pb−Free, Halogen Free and are RoHS Compliant

VEE2A

GND1

VDD1

RST

FLT

DESAT

GND2

OUTH

VDD2

OUTL

CLAMP

VEE2

RDY

IN−

Typical Applications

IN+

• Automotive Power Supplies

• HEV/EV Powertrain

• OBC

GND1A

• BSG

ORDERING INFORMATION

See detailed ordering and shipping information on page 7 of

this data sheet.

• EV Charger

• PTC Heater

Publication Order Number:

March, 2019 − Rev. 0

NCV57000/D

12 3 4 5 6 7...14

中文翻译

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与NCV57000D相关器件

型号	品牌	获取价格	描述	数据表
NCV57000DWR2G	ONSEMI	获取价格	Isolated High Current IGBT Gate Driver
NCV57001	ONSEMI	获取价格	Isolated High Current IGBT Gate Driver
NCV57001D	ONSEMI	获取价格	Isolated High Current IGBT Gate Driver
NCV57001DWR2G	ONSEMI	获取价格	Isolated High Current IGBT Gate Driver
NCV57001FDWR2G	ONSEMI	获取价格	Isolated high current and high efficiency IGBT gate driver with internal galvanic isolatio
NCV5700DR2G	ONSEMI	获取价格	High Current IGBT Gate Driver
NCV5701A	ONSEMI	获取价格	High Current IGBT Gate Drivers
NCV5701ADR2G	ONSEMI	获取价格	High Current IGBT Gate Drivers
NCV5701B	ONSEMI	获取价格	High Current IGBT Gate Drivers
NCV5701BDR2G	ONSEMI	获取价格	High Current IGBT Gate Drivers

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