5秒后页面跳转
NCV57081BDR2G PDF预览

NCV57081BDR2G

更新时间: 2024-11-23 11:01:39
品牌 Logo 应用领域
安森美 - ONSEMI
页数 文件大小 规格书
24页 646K
描述
Isolated High Current Gate Driver

NCV57081BDR2G 数据手册

 浏览型号NCV57081BDR2G的Datasheet PDF文件第2页浏览型号NCV57081BDR2G的Datasheet PDF文件第3页浏览型号NCV57081BDR2G的Datasheet PDF文件第4页浏览型号NCV57081BDR2G的Datasheet PDF文件第5页浏览型号NCV57081BDR2G的Datasheet PDF文件第6页浏览型号NCV57081BDR2G的Datasheet PDF文件第7页 
Isolated High Current IGBT  
Gate Driver  
NCD57080A, NCD57080B,  
NCD57080C  
NCD57080A, NCD57080B and NCD57080C are highcurrent  
single channel IGBT gate drivers with 3.75 kVrms internal galvanic  
isolation, designed for high system efficiency and reliability in high  
power applications. The devices accept complementary inputs and  
depending on the pin configuration, offer options such as Active  
Miller Clamp (NCD57080A), negative power supply (NCD57080B)  
and separate high and low (OUTH and OUTL) driver outputs  
(NCD57080C) for system design convenience. NCD57080 (A/B/C)  
accommodate wide range of input bias voltage and signal levels  
from 3.3 V to 20 V. NCD57080 (A/B/C) are available in narrowbody  
SOIC8 package.  
www.onsemi.com  
8
1
SOIC8 NB  
CASE 75107  
MARKING DIAGRAM  
8
Features  
High Peak Output Current (+6.5 A/6.5 A)  
Low Clamp Voltage Drop Eliminates the Need of Negative Power  
Supply to Prevent Spurious Gate Turnon (NCD57080A)  
Short Propagation Delays with Accurate Matching  
IGBT Gate Clamping during Short Circuit  
NCD57080x  
ALYW  
G
1
NCD57080  
x
= Specific Device Code  
= A/B/C  
= Assembly Location  
= Wafer Lot  
= Year  
IGBT Gate Active Pull Down  
A
L
Y
W
G
Tight UVLO Thresholds for Bias Flexibility  
Wide Bias Voltage Range including Negative V  
3.3 V, 5 V, and 15 V Logic Input  
3.75 kVrms Galvanic Isolation  
High Transient Immunity  
(NCD57080B)  
EE2  
= Work Week  
= PbFree Package  
PIN CONNECTIONS  
High Electromagnetic Immunity  
This Device is PbFree, Halogen Free/BFR Free and is RoHS  
V
DD1  
GND2  
CLAMP  
OUT  
Compliant  
IN+  
IN−  
Typical Applications  
Motor Control  
Uninterruptible Power Supplies (UPS)  
Industrial Power Supplies  
HVAC  
GND1  
V
DD2  
NCD57080A  
NCD57080B  
V
DD1  
V
EE2  
IN+  
IN−  
GND2  
OUT  
GND1  
V
DD2  
V
GND2  
OUTL  
OUTH  
DD1  
IN+  
IN−  
GND1  
V
DD2  
NCD57080C  
This document contains information on some products that are still under development.  
ON Semiconductor reserves the right to change or discontinue these products without  
notice.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 21 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
August, 2020 Rev. 1  
NCD57080A/D  

与NCV57081BDR2G相关器件

型号 品牌 获取价格 描述 数据表
NCV57081CDR2G ONSEMI

获取价格

Isolated High Current Gate Driver
NCV57084DR2G ONSEMI

获取价格

Isolated Compact IGBT Gate Driver with DESAT
NCV57085DR2G ONSEMI

获取价格

Isolated Compact IGBT Gate Driver with Current Sense
NCV57090A ONSEMI

获取价格

Isolated High Current IGBT/MOSFET Gate Driver
NCV57090ADWR2G ONSEMI

获取价格

Isolated High Current IGBT/MOSFET Gate Driver
NCV57090B ONSEMI

获取价格

Isolated High Current IGBT/MOSFET Gate Driver
NCV57090BDWR2G ONSEMI

获取价格

Isolated High Current IGBT/MOSFET Gate Driver
NCV57090C ONSEMI

获取价格

Isolated High Current IGBT/MOSFET Gate Driver
NCV57090CDWR2G ONSEMI

获取价格

Isolated High Current IGBT/MOSFET Gate Driver
NCV57090D ONSEMI

获取价格

Isolated High Current IGBT/MOSFET Gate Driver