Datasheet > NCV57001FDWR2G

NCV57001FDWR2G

更新时间： 2024-11-23 11:12:55

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
19页	542K
描述
Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation

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NCV57001FDWR2G 数据手册

DATA SHEET

www.onsemi.com

Isolated High Current IGBT

Gate Driver

SOIC−16 WB

CASE 751G−03

NCV57001F

NCV57001F is a variant of NCV57001 with reduced

Soft−Turn−Off time suited to drive large IGBTs or power modules.

NCV57001F is a high−current single channel IGBT driver with

internal galvanic isolation, designed for high system efficiency and

reliability in high power applications. Its features include

complementary inputs, open drain FAULT and Ready outputs, active

Miller clamp, accurate UVLOs, DESAT protection, and soft turn−off

at DESAT. NCV57001F accommodates both 5 V and 3.3 V signals on

the input side and wide bias voltage range on the driver side including

negative voltage capability. NCV57001F provides >5 kVrms

MARKING DIAGRAM

NCV57001F

DWR2G

AWLYYWWG

NCV57001FDWR2G = Specific Device Code

(UL1577 rating) galvanic isolation and >1200 V

(working

IORM

= Assembly Location

= Wafer Lot

= Year

= Work Week

= Pb−Free Package

voltage) capabilities. NCV57001F is available in the wide−body

SOIC−16 package with guaranteed 8 mm creepage distance between

input and output to fulfill reinforced safety insulation requirements.

Features

• High Current Output (+4/−6 A) at IGBT Miller Plateau Voltages

• Low Output Impedance for Enhanced IGBT Driving

• Short Propagation Delays with Accurate Matching

• Active Miller Clamp to Prevent Spurious Gate Turn−on

• DESAT Protection with Programmable Delay

• Typ 550 ns Soft Turn Off during IGBT Short Circuit

• IGBT Gate Clamping during Short Circuit

• IGBT Gate Active Pull Down

PIN CONNECTIONS

VEE2A

DESAT

GND2

N/C

GND1

VDD1

RST

FLT

VDD2

OUT

RDY

IN−

• Tight UVLO Thresholds for Bias Flexibility

• Wide Bias Voltage Range including Negative VEE2

• 3.3 V to 5 V Input Supply Voltage

CLAMP

VEE2

IN+

GND1A

• 5000 V Galvanic Isolation (to meet UL1577 requirements)

• 1200 V Working Voltage (per VDE0884−10 requirements)

• High transient immunity

ORDERING INFORMATION

See detailed ordering and shipping information on page 17 of

this data sheet.

• High electromagnetic immunity

• NCV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q100

Qualified and PPAP Capable

• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS

Compliant

Typical Applications

• Automotive Power Supplies

• HEV/EV Powertrain

• BSG Inverter

• PTC Heater

Publication Order Number:

August, 2021 − Rev. 2

NCV57001F/D

12 3 4 5 6 7...19

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