Datasheet > NCV57001D

NCV57001D

更新时间： 2024-01-07 06:39:03

品牌	Logo	应用领域
安森美 - ONSEMI		栅双极性晶体管
页数	文件大小	规格书
14页	229K
描述
Isolated High Current IGBT Gate Driver

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NCV57001D 数据手册

NCV57001

Isolated High Current IGBT

Gate Driver

NCV57001 is a high−current single channel IGBT driver with

internal galvanic isolation, designed for high system efficiency and

reliability in high power applications. Its features include

complementary inputs, open drain FAULT and Ready outputs, active

Miller clamp, accurate UVLOs, DESAT protection, and soft turn−off

at DESAT. NCV57001 accommodates both 5 V and 3.3 V signals on

the input side and wide bias voltage range on the driver side including

negative voltage capability. NCV57001 provides > 5 kVrms

www.onsemi.com

(UL1577 rating) galvanic isolation and > 1200 V

(working

iorm

voltage) capabilities. NCV57001 is available in the wide−body

SOIC−16 package with guaranteed 8 mm creepage distance between

input and output to fulfill reinforced safety insulation requirements.

SOIC−16 WB

CASE 751G−03

Features

MARKING DIAGRAM

• High Current Output (+4/−6 A) at IGBT Miller Plateau Voltages

• Low Output Impedance for Enhanced IGBT Driving

• Short Propagation Delays with Accurate Matching

• Active Miller Clamp to Prevent Spurious Gate Turn−on

• DESAT Protection with Programmable Delay

• Negative Voltage (Down to −9 V) Capability for DESAT

• Soft Turn Off During IGBT Short Circuit

XXXXXXXXXXX

AWLYYWWG

XXXXX = Specific Device Code

= Assembly Location

= Wafer Lot

= Year

= Work Week

= Pb−Free Package

• IGBT Gate Clamping During Short Circuit

• IGBT Gate Active Pull Down

• Tight UVLO Thresholds for Bias Flexibility

• Wide Bias Voltage Range including Negative VEE2

• 3.3 V to 5 V Input Supply Voltage

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present.

• Designed for AEC−Q100 Certification

• 5000 V Galvanic Isolation (to meet UL1577 Requirements)

• 1200 V Working Voltage (per VDE0884−10 Requirements)

• High Transient Immunity

PIN ASSIGNMENT

VEE2A

GND1

VDD1

RST

FLT

• High Electromagnetic Immunity

• These Devices are Pb−Free, Halogen Free and are RoHS Compliant

DESAT

GND2

N/C

Typical Applications

VDD2

OUT

RDY

IN−

• Automotive Power Supplies

• HEV/EV Powertrain

• OBC

CLAMP

VEE2

IN+

GND1A

• BSG

• EV Charger

• PTC Heater

ORDERING INFORMATION

See detailed ordering and shipping information on page 7 of

this data sheet.

Publication Order Number:

March, 2019 − Rev. 0

NCV57001/D

12 3 4 5 6 7...14

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与NCV57001D相关器件

型号	品牌	获取价格	描述	数据表
NCV57001DWR2G	ONSEMI	获取价格	Isolated High Current IGBT Gate Driver
NCV57001FDWR2G	ONSEMI	获取价格	Isolated high current and high efficiency IGBT gate driver with internal galvanic isolatio
NCV5700DR2G	ONSEMI	获取价格	High Current IGBT Gate Driver
NCV5701A	ONSEMI	获取价格	High Current IGBT Gate Drivers
NCV5701ADR2G	ONSEMI	获取价格	High Current IGBT Gate Drivers
NCV5701B	ONSEMI	获取价格	High Current IGBT Gate Drivers
NCV5701BDR2G	ONSEMI	获取价格	High Current IGBT Gate Drivers
NCV5701C	ONSEMI	获取价格	High Current IGBT Gate Drivers
NCV5701CDR2G	ONSEMI	获取价格	High Current IGBT Gate Drivers
NCV5702DR2G	ONSEMI	获取价格	IGBT 门极驱动器，高电流，独立

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