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NCP5214AMNR2G

更新时间： 2024-11-23 04:37:55
品牌 Logo 应用领域
安森美 - ONSEMI 双倍数据速率控制器
页数 文件大小 规格书
31页 363K
描述
2−in−1 Notebook DDR Power Controller

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中文翻译

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NCP5214AMNR2G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：DFN
包装说明：HVSON, SOLCC22,.2,20针数：22
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：1 week
风险等级：5.81模拟集成电路 - 其他类型：SWITCHING CONTROLLER
控制模式：VOLTAGE-MODE控制技术：PULSE WIDTH MODULATION
最大输入电压：24 V最小输入电压：4.5 V
标称输入电压：12 VJESD-30 代码：R-XDSO-N22
JESD-609代码：e3长度：6 mm
湿度敏感等级：1功能数量：1
端子数量：22最高工作温度：85 °C
最低工作温度：-40 °C最大输出电流：3 A
封装主体材料：UNSPECIFIED封装代码：HVSON
封装等效代码：SOLCC22,.2,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度（摄氏度）：260
认证状态：Not Qualified座面最大高度：1 mm
子类别：Switching Regulator or Controllers表面贴装：YES
切换器配置：PUSH-PULL最大切换频率：460 kHz
温度等级：INDUSTRIAL端子面层：Tin (Sn)
端子形式：NO LEAD端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
宽度：5 mmBase Number Matches：1

NCP5214AMNR2G 数据手册

 浏览型号NCP5214AMNR2G的Datasheet PDF文件第2页浏览型号NCP5214AMNR2G的Datasheet PDF文件第3页浏览型号NCP5214AMNR2G的Datasheet PDF文件第4页浏览型号NCP5214AMNR2G的Datasheet PDF文件第5页浏览型号NCP5214AMNR2G的Datasheet PDF文件第6页浏览型号NCP5214AMNR2G的Datasheet PDF文件第7页 
NCP5214A  
2−in−1 Notebook DDR  
Power Controller  
The NCP5214A 2−in−1 Notebook DDR Power Controller is  
specifically designed as a total power solution for notebook DDR  
memory system. This IC combines the efficiency of a PWM  
controller for the VDDQ supply with the simplicity of linear  
regulators for the VTT termination voltage and the buffered low  
noise reference. This IC contains a synchronous PWM buck  
controller for driving two external NFETs to form the DDR memory  
supply voltage (VDDQ). The DDR memory termination regulator  
output voltage (VTT) and the buffered VREF are internally set to  
track at the half of VDDQ. An internal power good voltage monitor  
tracks VDDQ output and notifies the user whether the VDDQ output  
is within target range. Protective features include soft−start  
circuitries, undervoltage monitoring of supply voltage, VDDQ  
overcurrent protection, VDDQ overvoltage and undervoltage  
protections, and thermal shutdown. The IC is packaged in DFN22.  
http://onsemi.com  
MARKING  
DIAGRAM  
1
DFN22  
22  
MN SUFFIX  
NCP5214A  
AWLYYWW  
G
CASE 506AF  
1
NCP5214A= Specific Device Code  
A
= Assembly Location  
= Wafer Lot  
= Year  
= Work Week  
= Pb−Free Package  
WL  
YY  
WW  
G
Features  
• Incorporates VDDQ, VTT Regulator, Buffered VREF  
• Adjustable VDDQ Output  
• VTT and VREF Track VDDQ/2  
• Operates from Single 5.0 V Supply  
• Supports VDDQ Conversion Rails from 4.5 V to 24 V  
• Power−saving Mode for High Efficiency at Light Load  
• Integrated Power FETs with VTT Regulator Sourcing/Sinking  
1.5 A DC and 2.4 A Peak Current  
PIN CONNECTIONS  
VDDQEN  
VTTEN  
FPWM  
SS  
VTTGND  
VTT  
PGND  
BGDDQ  
VCCP  
SWDDQ  
TGDDQ  
BOOST  
OCDDQ  
PGOOD  
VTTREF  
FBDDQ  
COMP  
• Requires Only 20 mF Ceramic Output Capacitor for VTT  
• Buffered Low Noise 15 mA VREF Output  
• All External Power MOSFETs are N−channel  
• <5.0 mA Current Consumption During Shutdown  
• Fixed Switching Frequency of 400 kHz  
• Soft−start Protection for VDDQ and VTT  
• Undervoltage Monitor of Supply Voltage  
• Overvoltage Protection and Undervoltage Protection for VDDQ  
• Short−circuit Protection for VDDQ and VTT  
• Thermal Shutdown  
VTTI  
FBVTT  
AGND  
DDQREF  
VCCA  
(Top View)  
NOTE: Pin 23 is the thermal pad on  
the bottom of the device.  
• Housed in DFN22  
• This is a Pb−Free Device  
ORDERING INFORMATION  
Device  
Package  
Shipping†  
2500 Tape & Reel  
Typical Applications  
NCP5214AMNR2G DFN22  
(Pb−Free)  
• Notebook DDR/DDR2 Memory Supply and Termination Voltage  
• Active Termination Busses (SSTL−18, SSTL−2, SSTL−3)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 0  
NCP5214A/D  
1234567...31

中文翻译

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