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NCP5214MNR2G PDF预览

NCP5214MNR2G

更新时间: 2024-11-24 11:15:35
品牌 Logo 应用领域
安森美 - ONSEMI 双倍数据速率开关光电二极管
页数 文件大小 规格书
33页 419K
描述
2-in-1 Notebook DDR Power Controller

NCP5214MNR2G 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:DFN包装说明:HVSON, SOLCC22,.2,20
针数:22Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:1 week风险等级:5.64
模拟集成电路 - 其他类型:SWITCHING CONTROLLER控制模式:VOLTAGE-MODE
控制技术:PULSE WIDTH MODULATION最大输入电压:24 V
最小输入电压:4.5 V标称输入电压:12 V
JESD-30 代码:R-PDSO-N22JESD-609代码:e3
长度:6 mm湿度敏感等级:1
功能数量:1端子数量:22
最高工作温度:85 °C最低工作温度:-40 °C
最大输出电流:2.4 A封装主体材料:PLASTIC/EPOXY
封装代码:HVSON封装等效代码:SOLCC22,.2,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1 mm子类别:Switching Regulator or Controllers
表面贴装:YES切换器配置:PUSH-PULL
最大切换频率:460 kHz温度等级:INDUSTRIAL
端子面层:Tin (Sn)端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:5 mm
Base Number Matches:1

NCP5214MNR2G 数据手册

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NCP5214  
2−in−1 Notebook DDR  
Power Controller  
The NCP5214 2−in−1 Notebook DDR Power Controller is  
specifically designed as a total power solution for notebook DDR  
memory system. This IC combines the efficiency of a PWM  
controller for the VDDQ supply with the simplicity of linear  
regulators for the VTT termination voltage and the buffered low  
noise reference. This IC contains a synchronous PWM buck  
controller for driving two external NFETs to form the DDR memory  
supply voltage (VDDQ). The DDR memory termination regulator  
output voltage (VTT) and the buffered VREF are internally set to  
track at the half of VDDQ. An internal power good voltage monitor  
tracks VDDQ output and notifies the user whether the VDDQ output  
is within target range. Protective features include soft−start  
circuitries, undervoltage monitoring of supply voltage, VDDQ  
overcurrent protection, VDDQ overvoltage and undervoltage  
protections, and thermal shutdown. The IC is packaged in DFN−22.  
http://onsemi.com  
MARKING  
DIAGRAM  
1
DFN−22  
22  
MN SUFFIX  
NCP5214  
AWLYYWW  
G
CASE 506AF  
1
NCP5214 = Specific Device Code  
A
= Assembly Location  
= Wafer Lot  
= Year  
= Work Week  
= Pb−Free Package  
WL  
YY  
WW  
G
Features  
Incorporates VDDQ, VTT Regulator, Buffered VREF  
Adjustable VDDQ Output  
VTT and VREF Track VDDQ/2  
Operates from Single 5.0 V Supply  
Supports VDDQ Conversion Rails from 4.5 V to 24 V  
Power−saving Mode for High Efficiency at Light Load  
Integrated Power FETs with VTT Regulator Sourcing/Sinking 1.5 A  
DC and 2.4 A Peak Current  
PIN CONNECTIONS  
VDDQEN  
VTTEN  
FPWM  
SS  
VTTGND  
VTT  
PGND  
BGDDQ  
VCCP  
SWDDQ  
TGDDQ  
BOOST  
OCDDQ  
PGOOD  
VTTREF  
FBDDQ  
COMP  
Requires Only 20 mF Ceramic Output Capacitor for VTT  
Buffered Low Noise 15 mA VREF Output  
All External Power MOSFETs are N−channel  
<5.0 mA Current Consumption During Shutdown  
Fixed Switching Frequency of 400 kHz  
Soft−start Protection for VDDQ and VTT  
Undervoltage Monitor of Supply Voltage  
Overvoltage Protection and Undervoltage Protection for VDDQ  
Short−circuit Protection for VDDQ and VTT  
Thermal Shutdown  
VTTI  
FBVTT  
AGND  
DDQREF  
VCCA  
(Top View)  
NOTE: Pin 23 is the thermal pad on  
the bottom of the device.  
Housed in DFN−22  
This is a Pb−Free Device  
ORDERING INFORMATION  
Device  
NCP5214MNR2G  
Package  
Shipping†  
2500 Tape & Reel  
Typical Applications  
DFN−22  
Notebook DDR/DDR2 Memory Supply and Termination Voltage  
Active Termination Busses (SSTL−18, SSTL−2, SSTL−3)  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 0  
NCP5214/D  

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