是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | DIP, DIP8,.3 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.67 |
内置保护: | UNDER VOLTAGE | 接口集成电路类型: | HALF BRIDGE BASED PERIPHERAL DRIVER |
JESD-30 代码: | R-PDIP-T8 | JESD-609代码: | e3 |
长度: | 9.78 mm | 湿度敏感等级: | 1 |
功能数量: | 1 | 端子数量: | 8 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
输出电流流向: | SOURCE AND SINK | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 15 V |
认证状态: | Not Qualified | 座面最大高度: | 4.45 mm |
子类别: | MOSFET Drivers | 最大供电电压: | 20 V |
最小供电电压: | 10 V | 标称供电电压: | 15 V |
表面贴装: | NO | 温度等级: | AUTOMOTIVE |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 断开时间: | 0.17 µs |
接通时间: | 0.17 µs | 宽度: | 7.62 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NCP5304DR2G | ONSEMI |
功能相似 |
High Voltage, High and Low Side Driver |
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