Datasheet > NCEP026N10M

NCEP026N10M

更新时间： 2024-03-03 10:11:11

品牌	Logo	应用领域
新洁能 - NCEPOWER		栅栅极
页数	文件大小	规格书
7页	352K
描述
新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超低的导通电阻（RDS(on)）与超低栅极电荷（Qg）的特点，结合先进轻巧紧凑的封装进一步提高了系统的功率密

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NCEP026N10M 数据手册

NCEP026N10M, NCEP026N10MD

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJC

R_θJA

0.5

℃/W

Electrical Characteristics (T_C=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

On Characteristics ^{(Note 3)}

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=100V,V_GS=0V

V_GS=±20V,V_DS=0V

100

μA

I_GSS

±100

Gate Threshold Voltage

V_GS(th)

V_DS=V_GS,I_D=250μA

2.0

3.0

2.4

2.2

2.5

4.0

2.6

mΩ

Ω

TO-220

TO-263

Drain-Source On-State Resistance

R_DS(ON)

V_GS=10V, I_D=100A

Gate resistance

R_G

Forward Transconductance

Dynamic Characteristics ^(Note4)

Input Capacitance

g_FS

V_DS=5V,I_D=100A

C_lss

C_oss

C_rss

14000 21000

V_DS=50V,V_GS=0V,

Output Capacitance

1100

F=1.0MHz

Reverse Transfer Capacitance

Switching Characteristics ^{(Note 4)}

Turn-on Delay Time

t_d(on)

t_r

t_d(off)

t_f

Turn-on Rise Time

V_DD=50V,I_D=100A

V_GS=10V,R_G=1.6Ω

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

Q_gs

Q_gd

240

360

V_DS=50V,I_D=100A,

Gate-Source Charge

V_GS=10V

Gate-Drain Charge

Drain-Source Diode Characteristics

Diode Forward Voltage ^{(Note 3)}

Diode Forward Current ^{(Note 2)}

Reverse Recovery Time

Reverse Recovery Charge

V_SD

I_S

V_GS=0V,I_S=100A

1.2

200

t_rr

T_J= 25°C, I_F= 100A

di/dt = 100A/μs^(Note3)

101

280

Qrr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. The value of R_θJAis measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T_A=25° C. The Power

dissipation P_DSMis based on R _θJAand the maximum allowed junction temperature of 150° C. The value in any given application depends on the user's

specific board design, and the maximum temperature of 175° C may be used if the PCB allows it.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition : Tj=25℃,V_DD=50V,V_G=10V,L=0.5mH,Rg=25Ω

Wuxi NCE Power Co., Ltd

Page2

V1.0

http://www.ncepower.com

123 4 5 6 7

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与NCEP026N10M相关器件

型号	品牌	描述	获取价格	数据表
NCEP026N10T	NCEPOWER	新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超	获取价格
NCEP026N85	NCEPOWER	新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超	获取价格
NCEP026N85D	NCEPOWER	新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超	获取价格
NCEP028N12LL	NCEPOWER	新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超	获取价格
NCEP028N60AGU	NCEPOWER	新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超	获取价格
NCEP028N85	NCEPOWER	新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超	获取价格

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