NCE603S
http://www.ncepower.com
N-Channel Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
VGS=±20V,VDS=0V
60
-
-
-
-
-
1
V
μA
nA
IGSS
-
±100
Gate Threshold Voltage
VGS(th)
RDS(ON)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=5A
VGS=4.5V, ID=5A
VDS=5V,ID=5A
1.0
-
1.6
24
32
-
2.5
28
38
-
V
mΩ
mΩ
S
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
11
Clss
Coss
Crss
-
-
-
979
120
100
-
-
-
PF
PF
PF
VDS=30V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
4.2
3.4
16
2
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=30V ,RL=2.5Ω
VGS=10V,RG=3Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
22
3.3
5.2
VDS=30V,ID=5A,
VGS=10V
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
VSD
IS
VGS=0V,IS=5A
-
-
-
-
1.2
V
A
-
5
-
trr
27
30
nS
nC
TJ = 25°C, IF =5A
Reverse Recovery Charge
Forward Turn-On Time
di/dt = 100A/μs(Note3)
Qrr
ton
-
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any a given application depends on the user's specific board design. The RθJA i is the sum of the thermal impedence from junction to lead
RθJL and lead to ambient..
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Co., Ltd
Page 2
V4.0