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NCE603S PDF预览

NCE603S

更新时间: 2024-04-09 18:59:24
品牌 Logo 应用领域
新洁能 - NCEPOWER /
页数 文件大小 规格书
10页 983K
描述
新洁能提供的12V~100VComplementary(N、P型互补式)MOSFET产品,是通过将P型与N型Trench功率MOSFET产品分别以高、低边互补配置的方式集成至单个封装中,极大程度上

NCE603S 数据手册

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NCE603S  
http://www.ncepower.com  
N-Channel Electrical Characteristics (TA=25unless otherwise noted)  
Parameter  
Symbol  
Condition  
Min Typ  
Max  
Unit  
Off Characteristics  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage Current  
On Characteristics (Note 3)  
BVDSS  
IDSS  
VGS=0V ID=250μA  
VDS=60V,VGS=0V  
VGS=±20V,VDS=0V  
60  
-
-
-
-
-
1
V
μA  
nA  
IGSS  
-
±100  
Gate Threshold Voltage  
VGS(th)  
RDS(ON)  
RDS(ON)  
gFS  
VDS=VGS,ID=250μA  
VGS=10V, ID=5A  
VGS=4.5V, ID=5A  
VDS=5V,ID=5A  
1.0  
-
1.6  
24  
32  
-
2.5  
28  
38  
-
V
mΩ  
mΩ  
S
Drain-Source On-State Resistance  
Forward Transconductance  
Dynamic Characteristics (Note4)  
Input Capacitance  
11  
Clss  
Coss  
Crss  
-
-
-
979  
120  
100  
-
-
-
PF  
PF  
PF  
VDS=30V,VGS=0V,  
F=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics (Note 4)  
Turn-on Delay Time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
4.2  
3.4  
16  
2
-
-
-
-
nS  
nS  
nS  
nS  
nC  
nC  
nC  
Turn-on Rise Time  
VDD=30V ,RL=2.5Ω  
VGS=10V,RG=3Ω  
Turn-Off Delay Time  
Turn-Off Fall Time  
Total Gate Charge  
Qg  
Qgs  
Qgd  
22  
3.3  
5.2  
VDS=30V,ID=5A,  
VGS=10V  
Gate-Source Charge  
Gate-Drain Charge  
Drain-Source Diode Characteristics  
Diode Forward Voltage (Note 3)  
Diode Forward Current (Note 2)  
Reverse Recovery Time  
VSD  
IS  
VGS=0V,IS=5A  
-
-
-
-
1.2  
V
A
-
5
-
trr  
27  
30  
nS  
nC  
TJ = 25°C, IF =5A  
Reverse Recovery Charge  
Forward Turn-On Time  
di/dt = 100A/μs(Note3)  
Qrr  
ton  
-
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
Notes:  
1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
2. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.  
The value in any a given application depends on the user's specific board design. The RθJA i is the sum of the thermal impedence from junction to lead  
RθJL and lead to ambient..  
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.  
4. Guaranteed by design, not subject to production  
Wuxi NCE Power Co., Ltd  
Page 2  
V4.0  

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