http://www.ncepower.com
NCE6050IA
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6050IA uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =60V,ID =50A
RDS(ON) <14mΩ @ VGS=10V
Schematic diagram
RDS(ON) <19mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
Marking and pin assignment
● Hard switched and high frequency circuits
● Uninterruptible power supply
100% UIS TESTED!
100% ΔVds TESTED!
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE6050IA
NCE6050IA
TO-251
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
60
Unit
Drain-Source Voltage
V
V
VDS
VGS
Gate-Source Voltage
±20
Drain Current-Continuous
50
35.4
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
200
A
Maximum Power Dissipation
Derating factor
85
W
PD
0.56
W/℃
mJ
℃
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
300
-55 To 175
TJ,TSTG
Wuxi NCE Power Co., Ltd
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V4.0