Datasheet > NCE6045XAG

NCE6045XAG

更新时间： 2024-04-09 18:59:35

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	685K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE6045XAG 数据手册

NCE6045XAG

http://www.ncepower.com

NCE N-Channel Enhancement Mode Power MOSFET

General Features

● V_DS= 60V,I_D=45A

Description

The NCE6045XAG uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

R_DS(ON)< 9.2mΩ @ V_GS=10V (Typ:8mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Low gate to drain charge to reduce switching losses

Application

● Power switching application

● Load switch

100% UIS TESTED!

100% ΔVds TESTED!

DFN 5X6

Schematic Diagram

Top View

Bottom View

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

6045XAG

NCE6045XAG

DFN5X6-8L

Ø330mm

12mm

5000

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±20

VGS

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

180

Maximum Power Dissipation

P_D

Derating factor

0.48

260

W/℃

℃

Single pulse avalanche energy ^{(Note 5)}

Operating Junction and Storage Temperature Range

E_AS

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

2.08

℃/W

Wuxi NCE Power Co., Ltd

Page1

V2.0

12 3 4 5 6 7

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NCE6045XG	NCEPOWER	新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFE	获取价格
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