Datasheet > NCE2006NE*

NCE2006NE*

更新时间： 2024-03-03 10:09:25

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	757K
描述
????新洁能提供的P型20V~60V和N型18V~100V的Dual（双芯）MOSFET产品，通过将两颗P型或者N型的功率MOSFET产品以并联合封的方式集成到单个封装中，极大程度上优化了产品结

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NCE2006NE* 数据手册

NCE2006NE

http://www.ncepower.com

Electrical Characteristics (T_A=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

On Characteristics ^{(Note 3)}

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=20V,V_GS=0V

V_GS=±10V,V_DS=0V

μA

I_GSS

±10

Gate Threshold Voltage

V_GS(th)

R_DS(ON)

g_FS

V_DS=V_GS,I_D=250μA

V_GS=4.5V, I_D=6.5A

V_GS=2.5V, I_D=5.5A

V_DS=5V,I_D=7A

0.5

0.7

1.0

mΩ

Drain-Source On-State Resistance

Forward Transconductance

Dynamic Characteristics ^(Note4)

Input Capacitance

C_lss

C_oss

C_rss

800

150

140

V_DS=10V,V_GS=0V,

F=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^{(Note 4)}

Turn-on Delay Time

t_d(on)

t_r

t_d(off)

t_f

Turn-on Rise Time

V_DD=10V,R_L=1.35Ω

V_GS=5V,R_GEN=3Ω

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

Q_gs

Q_gd

12.5

1.3

3.5

V_DS=10V,I_D=7A,

V_GS=4.5V

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics

Diode Forward Voltage ^{(Note 3)}

Diode Forward Current ^{(Note 2)}

V_SD

I_S

V_GS=0V,I_S=1A

1.2

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. Gate-Source Voltage (max) Test condition: V_GD=0V I_S=±1mA

Wuxi NCE Power Co., Ltd

Page2

V4.0

123 4 5 6 7

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