Pb Free Product
NCE0224AF
http://www.ncepower.com
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
BVDSS
IDSS
VGS=0V ID=250μA
VDS=200V,VGS=0V
VGS=±20V,VDS=0V
200
220
-
1
V
-
-
-
-
μA
nA
IGSS
±100
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=15A
VDS=10V,ID=15A
1.0
-
1.5
62
-
2.5
80
-
V
mΩ
S
30
Clss
Coss
Crss
4200
163
75
PF
PF
PF
VDS=25V,VGS=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
-
-
-
-
10
18
22
5
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=100V,ID=15A
GS=10V,RGEN=2.5Ω
V
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
60
19
17
VDS=100V,ID=15A,
Gate-Source Charge
VGS=10V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
VSD
IS
VGS=0V,IS=15A
-
-
-
-
-
-
-
1.2
24
-
V
A
trr
TJ = 25°C, IF = 15A
di/dt = 100A/μs(Note3)
90
300
nS
nC
Reverse Recovery Charge
Qrr
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition: Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
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