http://www.ncepower.com
NCE0224K
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0224K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =200V,ID =24A
Schematic diagram
RDS(ON) < 80mΩ @ VGS=10V (Typ:64mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
Marking and pin assignment
● Hard switched and high frequency circuits
● Uninterruptible power supply
100% UIS TESTED!
TO-252 top view
100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE0224K
NCE0224K
TO-252
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
200
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
±20
V
VGS
Drain Current-Continuous
24
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current (Note 1)
ID (100℃)
17
96
A
A
IDM
PD
Maximum Power Dissipation
150
250
W
mJ
V
Single pulse avalanche energy (Note 5)
EAS
VDS Spike (Note 6)
10μs
240
Operating Junction and Storage Temperature Range
-55 To 175
1
℃
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
℃/W
Wuxi NCE Power Co., Ltd
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