Datasheet > NCE0260T

NCE0260T

更新时间： 2024-03-03 10:10:43

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	313K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE0260T 数据手册

Pb Free Product

http://www.ncepower.com

NCE0260T

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE0260T uses advanced trench technology and design

to provide excellent RDS(ON) with low gate charge. It can be

used in a wide variety of applications.

General Features

● V_DS=200V,I_D=60A

R_DS(ON)<32mΩ @ V_GS=10V

Schematic diagram

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

TO-247 top view

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE0260T

TO-247

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

200

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

280

Maximum Power Dissipation

300

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

2.0

W/℃

℃

E_AS

225

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

0.5

℃/W

Wuxi NCE Power Co., Ltd

Page 1

v1.0

12 3 4 5 6 7

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