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NAND256W4M2CZC5E PDF预览

NAND256W4M2CZC5E

更新时间: 2024-10-26 05:26:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路动态存储器
页数 文件大小 规格书
23页 229K
描述
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP

NAND256W4M2CZC5E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
JESD-30 代码:R-PBGA-B137内存集成电路类型:MEMORY CIRCUIT
混合内存类型:FLASH+SDRAM端子数量:137
最高工作温度:85 °C最低工作温度:-30 °C
封装主体材料:PLASTIC/EPOXY封装代码:FBGA
封装等效代码:BGA137,10X15,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, FINE PITCH电源:3 V
认证状态:Not Qualified子类别:Other Memory ICs
标称供电电压 (Vsup):3 V表面贴装:YES
温度等级:OTHER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
Base Number Matches:1

NAND256W4M2CZC5E 数据手册

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NAND256-M  
NAND512-M, NAND01G-M  
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND  
Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP  
Features  
Multi-Chip Packages  
FBGA  
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND  
Flash + 1 die of 256 Mb (x16) SDR  
LPSDRAM  
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND  
Flash + 2 dice of 256 Mb (x16) SDR  
LPSDRAMs  
TFBGA107 10.5 x 13 x 1.2mm  
TFBGA149 10 x 13.5 x 1.2mm  
LFBGA137 10.5 x 13 x 1.4mm  
TFBGA137 10.5 x 13 x 1.2 mm(1)  
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND  
Flash +1 die of 256 Mb (x16) DDR  
LPSDRAM  
– 1 die of 512 Mb (x16) NAND Flash + 1 die  
of 256 Mb or 512 Mb (x16) DDR LPSDRAM  
Supply voltages  
(1) Preliminary specifications.  
– V  
– V  
= 1.7V to 1.95V or 2.5V to 3.6V  
DDF  
DDD  
Fast Block Erase  
= V  
= 1.7V to 1.9V  
DDQD  
– Block erase time: 2ms (typ)  
Electronic Signature  
®
Status Register  
ECOPACK packages  
Data integrity  
Temperature range  
– 100,000 Program/Erase cycles  
– 10 years Data Retention  
– -30 to 85°C  
Flash Memory  
LPSDRAM  
NAND Interface  
Interface: x16 or x 32 bus width  
Deep Power Down mode  
1.8v LVCMOS interface  
– x8 or x16 bus width  
– Multiplexed Address/ Data  
Page size  
– x8 device: (512 + 16 spare) Bytes  
– x16 device: (256 + 8 spare) Words  
Quad internal Banks controlled by BA0 and  
BA1  
Automatic and controlled Precharge  
Block size  
– x8 device: (16K + 512 spare) Bytes  
– x16 device: (8K + 256 spare) Words  
Auto Refresh and Self Refresh  
– 8,192 Refresh cycles/64ms  
– Programmable Partial Array Self Refresh  
Page Read/Program  
– Auto Temperature Compensated Self  
Refresh  
– Random access: 15µs (max)  
– Sequential access: 50ns (min)  
– Page program time: 200µs (typ)  
Wrap sequence: sequential/interleave  
Burst Termination by Burst Stop command and  
Copy Back Program mode  
Precharge command  
– Fast page copy without external buffering  
August 2006  
Rev 5  
1/23  
www.st.com  
2

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256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
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256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.