5秒后页面跳转
NAND32GAH0KZE5F PDF预览

NAND32GAH0KZE5F

更新时间: 2024-10-27 06:44:39
品牌 Logo 应用领域
恒忆 - NUMONYX /
页数 文件大小 规格书
32页 689K
描述
Flash, 4GX8, PBGA169, 14 X 18 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, TFBGA-169

NAND32GAH0KZE5F 数据手册

 浏览型号NAND32GAH0KZE5F的Datasheet PDF文件第2页浏览型号NAND32GAH0KZE5F的Datasheet PDF文件第3页浏览型号NAND32GAH0KZE5F的Datasheet PDF文件第4页浏览型号NAND32GAH0KZE5F的Datasheet PDF文件第5页浏览型号NAND32GAH0KZE5F的Datasheet PDF文件第6页浏览型号NAND32GAH0KZE5F的Datasheet PDF文件第7页 
NAND32GAHOK NAND64GAHOK  
NAND128AHOK NAND256AHOK  
4-Gbyte, 8-Gbyte, 16-Gbyte, 32-Gbyte, 1.8 V/3.3 V supply,  
NAND flash memories with MultiMediaCard™ interface  
Preliminary Data  
Features  
Packaged NAND flash memory with  
MultiMediaCard interface  
FBGA169  
Up to 32 Gbytes of formatted data storage  
High capacity memory access  
eMMC/MultiMediaCard system specification,  
compliant with V4.3  
Full backward compatibility with previous  
MultiMediaCard system specification  
LFBGA169 14 x 18 x 1.4 mm (ZD)  
TFBGA169 14 x 18 x 1.2 mm (ZE)  
Bus mode  
– High-speed MultiMediaCard protocol  
– Three different data bus widths:1 bit, 4 bits,  
8 bits  
– Data transfer rate: up to 52 Mbyte/s  
Operating voltage range:  
Error free memory access  
– V  
=1.8 V/3.3 V  
CCQ  
– Internal error correction code  
– V = 3.3 V  
CC  
– Internal enhanced data management  
algorithm (wear levelling, bad block  
management, garbage collection)  
Multiple block read (x8 at 52 MHz):  
up to 28.5 Mbyte/s  
Multiple block write (x8 at 52 MHz):  
– Possibility for the host to make sudden  
power failure safe-update operations for  
data content  
up to 16 Mbyte/s  
Power dissipation  
Boot  
– Standby current: 150 µA (typ)  
– Read current: 70 mA (typ)  
– Write current: 80 mA (typ)  
– Simple boot sequence method  
Power save  
– Enhanced power saving method by  
introducing sleep functionality  
Security  
– Password protection of data  
– Built-in write protection  
Table 1.  
Device summary  
Root part number  
Package  
Operating voltage  
NAND32GAH0K  
NAND64GAH0K  
NAND128AH0K  
NAND256AH0K  
TFBGA169 14 x 18 x 1.2 mm  
LFBGA169 14 x 18 x 1.4 mm  
VCC = 3.3 V, VCCQ = 1.8 V/3.3 V  
October 2009  
Rev 3  
1/32  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.numonyx.com  
1

与NAND32GAH0KZE5F相关器件

型号 品牌 获取价格 描述 数据表
NAND32GAH0PZA5E NUMONYX

获取价格

Flash, 4GX8, PBGA169, 12 X 16 MM, 1.40 MM HEIGHT, 0.50 MM PITCH, ROHS COMPLIANT, LFBGA-169
NAND32GAH0PZA5F NUMONYX

获取价格

Flash Memory,
NAND512-A STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512-M STMICROELECTRONICS

获取价格

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND512R3A STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512R3A0AN1 STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512R3A0AN1E STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512R3A0AN1F STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512R3A0AN1T STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512R3A0AN6 STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash