Datasheet > NAND256W4M2CZB5E

NAND256W4M2CZB5E

更新时间： 2024-10-26 05:26:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存动态存储器
页数	文件大小	规格书
23页	229K
描述
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP

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中文翻译

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数据手册

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NAND256W4M2CZB5E 数据手册

NAND256-M

NAND512-M, NAND01G-M

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND

Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP

Features

■ Multi-Chip Packages

FBGA

– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND

Flash + 1 die of 256 Mb (x16) SDR

LPSDRAM

– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND

Flash + 2 dice of 256 Mb (x16) SDR

LPSDRAMs

TFBGA107 10.5 x 13 x 1.2mm

TFBGA149 10 x 13.5 x 1.2mm

LFBGA137 10.5 x 13 x 1.4mm

TFBGA137 10.5 x 13 x 1.2 mm⁽¹⁾

– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND

Flash +1 die of 256 Mb (x16) DDR

LPSDRAM

– 1 die of 512 Mb (x16) NAND Flash + 1 die

of 256 Mb or 512 Mb (x16) DDR LPSDRAM

■ Supply voltages

(1) Preliminary specifications.

– V

= 1.7V to 1.95V or 2.5V to 3.6V

DDF

DDD

■ Fast Block Erase

= V

= 1.7V to 1.9V

DDQD

– Block erase time: 2ms (typ)

■ Electronic Signature

■ Status Register

■ ECOPACK packages

■ Data integrity

■ Temperature range

– 100,000 Program/Erase cycles

– 10 years Data Retention

– -30 to 85°C

Flash Memory

LPSDRAM

■ NAND Interface

■ Interface: x16 or x 32 bus width

■ Deep Power Down mode

■ 1.8v LVCMOS interface

– x8 or x16 bus width

– Multiplexed Address/ Data

■ Page size

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ Quad internal Banks controlled by BA0 and

BA1

■ Automatic and controlled Precharge

■ Block size

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ Auto Refresh and Self Refresh

– 8,192 Refresh cycles/64ms

– Programmable Partial Array Self Refresh

■ Page Read/Program

– Auto Temperature Compensated Self

Refresh

– Random access: 15µs (max)

– Sequential access: 50ns (min)

– Page program time: 200µs (typ)

■ Wrap sequence: sequential/interleave

■ Burst Termination by Burst Stop command and

■ Copy Back Program mode

Precharge command

– Fast page copy without external buffering

August 2006

Rev 5

1/23

www.st.com

12 3 4 5 6 7...23

中文翻译

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与NAND256W4M2CZB5E相关器件

型号	品牌	获取价格	描述	数据表
NAND256W4M2CZB5F	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND256W4M2CZC5E	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND256W4M2CZC5F	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND256W4M5AZB5E	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND256W4M5AZB5F	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND256W4M5AZC5E	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND256W4M5AZC5F	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND256W4M5BZB5E	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND256W4M5BZB5F	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND256W4M5BZC5E	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.

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