NAND01GW3B2BN6F

更新时间： 2024-02-27 06:01:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
62页	713K
描述
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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技术参数
数据手册

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NAND01GW3B2BN6F 技术参数

生命周期：	Obsolete	零件包装代码：	TSOP
包装说明：	12 X 20 MM, PLASTIC, TSOP-48	针数：	48
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.1.A
HTS代码：	8542.32.00.51	风险等级：	5.83
JESD-30 代码：	R-PDSO-G48	长度：	18.4 mm
内存密度：	1073741824 bit	内存集成电路类型：	FLASH
内存宽度：	8	功能数量：	1
端子数量：	48	字数：	134217728 words
字数代码：	128000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	128MX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	并行/串行：	PARALLEL
编程电压：	3 V	座面最大高度：	1.2 mm
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	类型：	NAND TYPE
宽度：	12 mm	Base Number Matches：	1

NAND01GW3B2BN6F 数据手册

NAND01G-B2B, NAND02G-B2C

Description

ST NAND01G-B2B and NAND02G-B2C Flash 2112 Byte/ 1056 Word Page is a family of

non-volatile Flash memories that uses NAND cell technology. The devices range from 1 Gbit

to 2 Gbits and operate with either a 1.8V or 3V voltage supply. The size of a Page is either

2112 Bytes (2048 + 64 spare) or 1056 Words (1024 + 32 spare) depending on whether the

device has a x8 or x16 bus width.

The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or

x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate

to other densities without changing the footprint.

Each block can be programmed and erased over 100,000 cycles. To extend the lifetime of

NAND Flash devices it is strongly recommended to implement an Error Correction Code

(ECC).

The devices feature a Write Protect pin that allows performing hardware protection against

program and erase operations.

The devices feature an open-drain Ready/Busy output that can be used to identify if the

Program/Erase/Read (P/E/R) Controller is currently active. The use of an open-drain output

allows the Ready/Busy pins from several memories to be connected to a single pull-up

resistor.

A Copy Back Program command is available to optimize the management of defective

blocks. When a Page Program operation fails, the data can be programmed in another page

without having to resend the data to be programmed.

Each device has Cache Program and Cache Read features which improve the program and

read throughputs for large files. During Cache Programming, the device loads the data in a

Cache Register while the previous data is transferred to the Page Buffer and programmed

into the memory array. During Cache Reading, the device loads the data in a Cache

All devices have the Chip Enable Don’t Care feature, which allows code to be directly

downloaded by a microcontroller, as Chip Enable transitions during the latency time do not

stop the read operation.

All devices have the option of a Unique Identifier (serial number), which allows each device

to be uniquely identified.

The Unique Identifier options is subject to an NDA (Non Disclosure Agreement) and so not

described in the datasheet. For more details of this option contact your nearest ST Sales

office.

The devices are available in the following packages:

■

TSOP48 (12 x 20mm)

VFBGA63 (9.5 x 12 x 1mm, 0.8mm pitch) for NAND02G-B2C devices.

VFBGA63 (9 x 11 x 1mm, 0.8mm pitch) for NAND01G-B2B devices.

In order to meet environmental requirements, ST offers the NAND01G-B2B and NAND02G-

B2C in ECOPACK packages. ECOPACK packages are Lead-free. The category of second

Level Interconnect is marked on the package and on the inner box label, in compliance with

JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also

marked on the inner box label. ECOPACK is an ST trademark.

7/62

1...4 5 678 9 10...62

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与NAND01GW3B2BN6F相关器件

型号	品牌	描述	获取价格	数据表
NAND01GW3B2BN6T	STMICROELECTRONICS	暂无描述	获取价格
NAND01GW3B2BV1	NUMONYX	128MX8 FLASH 3V PROM, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48	获取价格
NAND01GW3B2BV1F	NUMONYX	Flash, 128MX8, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-	获取价格
NAND01GW3B2BV1T	NUMONYX	Flash, 128MX8, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48	获取价格
NAND01GW3B2BV6	NUMONYX	128MX8 FLASH 3V PROM, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48	获取价格
NAND01GW3B2BV6E	NUMONYX	Flash, 128MX8, 25000ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-	获取价格

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