5秒后页面跳转
N1802NC160 PDF预览

N1802NC160

更新时间: 2024-11-05 18:59:15
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
10页 157K
描述
Silicon Controlled Rectifier, 1600V V(DRM), 1600V V(RRM), 1 Element

N1802NC160 技术参数

生命周期:TransferredReach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.74
配置:SINGLE最大直流栅极触发电流:300 mA
JESD-30 代码:O-XXDB-X3元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:DISK BUTTON
断态重复峰值电压:1600 V重复峰值反向电压:1600 V
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED触发设备类型:SCR
Base Number Matches:1

N1802NC160 数据手册

 浏览型号N1802NC160的Datasheet PDF文件第2页浏览型号N1802NC160的Datasheet PDF文件第3页浏览型号N1802NC160的Datasheet PDF文件第4页浏览型号N1802NC160的Datasheet PDF文件第5页浏览型号N1802NC160的Datasheet PDF文件第6页浏览型号N1802NC160的Datasheet PDF文件第7页 
Date:- 02 August 2012  
Data Sheet Issue:- 2  
Phase Control Thyristor  
Types N1802NC120 to N1802NC160  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
1200-1600  
1200-1600  
1200-1600  
1300-1700  
V
V
V
V
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)  
IT(AV)  
IT(AV)  
IT(RMS)  
IT(d.c.)  
ITSM  
ITSM2  
I2t  
Mean on-state current, Tsink=55°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 3)  
Nominal RMS on-state current. Tsink=25°C, (note 2)  
D.C. on-state current. Tsink= 25°C, (note 4)  
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)  
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)  
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)  
I2t capacity for fusing tp=10ms, VRM10V, (note 5)  
Maximum rate of rise of on-state current (repetitive), (Note 6)  
Maximum rate of rise of on-state current (non-repetitive), (Note 6)  
Peak reverse gate voltage  
1802  
A
A
1216  
718  
A
3592  
A
3033  
A
29.6  
kA  
kA  
A2s  
A2s  
A/µs  
A/µs  
V
32.5  
4.38×106  
5.28×106  
500  
I2t  
(di/dt)cr  
1000  
VRGM  
PG(AV)  
PGM  
VGD  
5
Mean forward gate power  
4
W
Peak forward gate power  
30  
W
Non-trigger gate voltage, (Note 7)  
0.25  
V
THS  
Operating temperature range  
-40 to +125  
-40 to +150  
°C  
°C  
Tstg  
Storage temperature range  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, ITM=1500A, IFG=2A, tr0.5µs, Tcase=125°C.  
7) Rated VDRM  
.
Data Sheet. Types N1802NC120 to N1802NC160 Issue 2.  
Page 1 of 10  
August 2012  

与N1802NC160相关器件

型号 品牌 获取价格 描述 数据表
N1802NS120 IXYS

获取价格

Silicon Controlled Rectifier, 3592A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 101A33
N1802NS120-160 IXYS

获取价格

Silicon Controlled Rectifier, 3592A I(T)RMS, 1500V V(DRM), 1500V V(RRM), 1 Element
N1802NS140 IXYS

获取价格

Silicon Controlled Rectifier, 3592A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, 101A33
N1802NS160 IXYS

获取价格

Silicon Controlled Rectifier, 3592A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, 101A33
N1806QK120 IXYS

获取价格

Silicon Controlled Rectifier, 3571A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
N1806QK140 IXYS

获取价格

Silicon Controlled Rectifier, 3571A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element
N1806QK160 IXYS

获取价格

Silicon Controlled Rectifier, 3571A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element,
N1806QK160 LITTELFUSE

获取价格

Littelfuse提供业界最全面的标准相位控制晶闸管系列之一。 器件电压范围在400V至
N1806QK180 IXYS

获取价格

Silicon Controlled Rectifier, 3571A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element,
N1810REFILL ETC

获取价格

TECHNO-WELD 4.5MM 10PC REFILL