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N1806QK140 PDF预览

N1806QK140

更新时间: 2024-11-06 19:34:19
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
11页 273K
描述
Silicon Controlled Rectifier, 3571A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element

N1806QK140 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:DISK BUTTON, O-CXDB-X3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.87配置:SINGLE
最大直流栅极触发电流:300 mAJESD-30 代码:O-CXDB-X3
元件数量:1端子数量:3
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:3571 A
断态重复峰值电压:1400 V重复峰值反向电压:1400 V
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

N1806QK140 数据手册

 浏览型号N1806QK140的Datasheet PDF文件第2页浏览型号N1806QK140的Datasheet PDF文件第3页浏览型号N1806QK140的Datasheet PDF文件第4页浏览型号N1806QK140的Datasheet PDF文件第5页浏览型号N1806QK140的Datasheet PDF文件第6页浏览型号N1806QK140的Datasheet PDF文件第7页 
Date:- 1 Aug, 2005  
Data Sheet Issue:- 1  
WESTCODE  
IXYS  
An  
Company  
Provisional Data  
Wespack Phase Control Thyristor  
Types N1806QK120 to N1806QK180  
Development Type No.: NX058QK120-180  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
1200-1800  
1200-1800  
1200-1800  
1300-1900  
V
V
V
V
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)M  
IT(AV)M  
IT(AV)M  
Maximum average on-state current, Tsink=55°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 3)  
1806  
1237  
634  
A
A
A
IT(RMS)M Nominal RMS on-state current, Tsink=25°C, (note 2)  
3571  
3083  
19.1  
A
IT(d.c.)  
ITSM  
ITSM2  
I2t  
D.C. on-state current, Tsink=25°C, (note 4)  
A
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)  
kA  
kA  
A2s  
A2s  
21.0  
Peak non-repetitive surge tp=10ms, Vrm 10V, (note 5)  
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)  
1.82×106  
2.21×106  
100  
I2t  
I2t capacity for fusing tp=10ms, Vrm 10V, (note 5)  
(continuous, 50Hz)  
(repetitive, 50Hz, 60s)  
(non-repetitive)  
(di/dt)cr Critical rate of rise of on-state current (note 6)  
200  
A/µs  
400  
VRGM  
PG(AV)  
PGM  
Peak reverse gate voltage  
Mean forward gate power  
Peak forward gate power  
Operating temperature range  
Storage temperature range  
5
V
4
W
W
°C  
°C  
30  
Tj op  
-40 to +125  
-40 to +150  
Tstg  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, ITM=2000A, IFG=2A, tr 0.5µs, Tcase=125°C.  
Provisional Data Sheet. Types N1806QK120 to N1806QK180 Issue 1  
Page 1 of 11  
August, 2005  

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