5秒后页面跳转
N1200CH36JOO PDF预览

N1200CH36JOO

更新时间: 2024-11-05 20:02:15
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
3页 237K
描述
Silicon Controlled Rectifier, 5590A I(T)RMS, 4850000mA I(T), 3600V V(DRM), 3600V V(RRM), 1 Element

N1200CH36JOO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-MEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.82配置:SINGLE
关态电压最小值的临界上升速率:500 V/us最大直流栅极触发电流:300 mA
最大直流栅极触发电压:3 V最大维持电流:1000 mA
JESD-30 代码:O-MEDB-N2通态非重复峰值电流:35500 A
元件数量:1端子数量:2
最大通态电流:4850000 A封装主体材料:METAL
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:5590 A
重复峰值关态漏电流最大值:300000 µA断态重复峰值电压:3600 V
重复峰值反向电压:3600 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:SCR
Base Number Matches:1

N1200CH36JOO 数据手册

 浏览型号N1200CH36JOO的Datasheet PDF文件第2页浏览型号N1200CH36JOO的Datasheet PDF文件第3页 

与N1200CH36JOO相关器件

型号 品牌 获取价格 描述 数据表
N1200CH36KOO IXYS

获取价格

Silicon Controlled Rectifier, 5590A I(T)RMS, 4850000mA I(T), 3600V V(DRM), 3600V V(RRM), 1
N1200CH36LOO IXYS

获取价格

Silicon Controlled Rectifier, 5590A I(T)RMS, 4850000mA I(T), 3600V V(DRM), 3600V V(RRM), 1
N1200CH38GOO IXYS

获取价格

Silicon Controlled Rectifier, 5590A I(T)RMS, 4850000mA I(T), 3800V V(DRM), 3800V V(RRM), 1
N1200CH38HOO IXYS

获取价格

Silicon Controlled Rectifier, 5590A I(T)RMS, 4850000mA I(T), 3800V V(DRM), 3800V V(RRM), 1
N1200CH42 IXYS

获取价格

Silicon Controlled Rectifier, 5590A I(T)RMS, 4850000mA I(T), 4200V V(DRM), 4200V V(RRM), 1
N1200CH42LOO IXYS

获取价格

Silicon Controlled Rectifier, 5590A I(T)RMS, 4850000mA I(T), 4200V V(DRM), 4200V V(RRM), 1
N1206R225KCT ETC

获取价格

Multilayer Ceramic Capacitors
N1206R225KNT ETC

获取价格

Multilayer Ceramic Capacitors
N120AA1 MMD

获取价格

Industry Standard Package
N120AA2 MMD

获取价格

Industry Standard Package