生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | 其他特性: | HIGH RELIABILITY |
配置: | SINGLE | 关态电压最小值的临界上升速率: | 300 V/us |
最大直流栅极触发电流: | 150 mA | 最大直流栅极触发电压: | 3 V |
最大维持电流: | 600 mA | JEDEC-95代码: | TO-200AB |
JESD-30 代码: | O-CEDB-N2 | 最大漏电流: | 20 mA |
通态非重复峰值电流: | 2500 A | 元件数量: | 1 |
端子数量: | 2 | 最大通态电流: | 440000 A |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 认证状态: | Not Qualified |
最大均方根通态电流: | 401.92 A | 重复峰值关态漏电流最大值: | 20000 µA |
断态重复峰值电压: | 400 V | 重复峰值反向电压: | 400 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | END |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
N105CH04HOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 400V V(DRM), 400V V(RRM), 1 | |
N105CH04JOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 400V V(DRM), 400V V(RRM), 1 | |
N105CH04KOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 400V V(DRM), 400V V(RRM), 1 | |
N105CH10 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 401.92A I(T)RMS, 108000mA I(T), 1000V V(DRM), 1000V V(RRM), | |
N105CH10GOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 1000V V(DRM), 1000V V(RRM), | |
N105CH10HOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 1000V V(DRM), 1000V V(RRM), | |
N105CH10JOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 1000V V(DRM), 1000V V(RRM), | |
N105CH10KOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 1000V V(DRM), 1000V V(RRM), | |
N105CH10LOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 1000V V(DRM), 1000V V(RRM), | |
N105CH12GOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 1200V V(DRM), 1200V V(RRM), |