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N105CH04GOO PDF预览

N105CH04GOO

更新时间: 2024-11-05 18:30:23
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
3页 425K
描述
Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB

N105CH04GOO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
配置:SINGLE关态电压最小值的临界上升速率:300 V/us
最大直流栅极触发电流:150 mA最大直流栅极触发电压:3 V
最大维持电流:600 mAJEDEC-95代码:TO-200AB
JESD-30 代码:O-CEDB-N2最大漏电流:20 mA
通态非重复峰值电流:2500 A元件数量:1
端子数量:2最大通态电流:440000 A
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:401.92 A重复峰值关态漏电流最大值:20000 µA
断态重复峰值电压:400 V重复峰值反向电压:400 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
端子形式:NO LEAD端子位置:END
触发设备类型:SCRBase Number Matches:1

N105CH04GOO 数据手册

 浏览型号N105CH04GOO的Datasheet PDF文件第2页浏览型号N105CH04GOO的Datasheet PDF文件第3页 

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Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 400V V(DRM), 400V V(RRM), 1
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Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 400V V(DRM), 400V V(RRM), 1
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Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 1000V V(DRM), 1000V V(RRM),
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Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 1000V V(DRM), 1000V V(RRM),
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