生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.82 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 配置: | SINGLE |
关态电压最小值的临界上升速率: | 500 V/us | 最大直流栅极触发电流: | 150 mA |
最大直流栅极触发电压: | 3 V | 最大维持电流: | 600 mA |
JEDEC-95代码: | TO-200AB | JESD-30 代码: | O-CEDB-N2 |
最大漏电流: | 20 mA | 通态非重复峰值电流: | 2500 A |
元件数量: | 1 | 端子数量: | 2 |
最大通态电流: | 440000 A | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
认证状态: | Not Qualified | 最大均方根通态电流: | 401.92 A |
重复峰值关态漏电流最大值: | 20000 µA | 断态重复峰值电压: | 1000 V |
重复峰值反向电压: | 1000 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | END | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
N105CH10KOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 1000V V(DRM), 1000V V(RRM), | |
N105CH10LOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 1000V V(DRM), 1000V V(RRM), | |
N105CH12GOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 1200V V(DRM), 1200V V(RRM), | |
N105CH12HOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 1200V V(DRM), 1200V V(RRM), | |
N105CH12JOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 1200V V(DRM), 1200V V(RRM), | |
N105CH16 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 401.92A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element | |
N105PH04 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 172.7A I(T)RMS, 110000mA I(T), 400V V(DRM), 400V V(RRM), 1 E | |
N105PH04LOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 172.7A I(T)RMS, 110000mA I(T), 400V V(DRM), 400V V(RRM), 1 E | |
N105PH06 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 172.7A I(T)RMS, 110000mA I(T), 600V V(DRM), 600V V(RRM), 1 E | |
N105PH06KOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 172.7A I(T)RMS, 110000mA I(T), 600V V(DRM), 600V V(RRM), 1 E |