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N105CH10JOO PDF预览

N105CH10JOO

更新时间: 2024-11-05 18:30:23
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
3页 425K
描述
Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB

N105CH10JOO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.82Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE
关态电压最小值的临界上升速率:500 V/us最大直流栅极触发电流:150 mA
最大直流栅极触发电压:3 V最大维持电流:600 mA
JEDEC-95代码:TO-200ABJESD-30 代码:O-CEDB-N2
最大漏电流:20 mA通态非重复峰值电流:2500 A
元件数量:1端子数量:2
最大通态电流:440000 A封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:401.92 A
重复峰值关态漏电流最大值:20000 µA断态重复峰值电压:1000 V
重复峰值反向电压:1000 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:SCR
Base Number Matches:1

N105CH10JOO 数据手册

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Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 1000V V(DRM), 1000V V(RRM),
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Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 1000V V(DRM), 1000V V(RRM),
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Silicon Controlled Rectifier, 401.92A I(T)RMS, 440000mA I(T), 1200V V(DRM), 1200V V(RRM),
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Silicon Controlled Rectifier, 172.7A I(T)RMS, 110000mA I(T), 400V V(DRM), 400V V(RRM), 1 E
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Silicon Controlled Rectifier, 172.7A I(T)RMS, 110000mA I(T), 600V V(DRM), 600V V(RRM), 1 E
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Silicon Controlled Rectifier, 172.7A I(T)RMS, 110000mA I(T), 600V V(DRM), 600V V(RRM), 1 E