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N105PH04 PDF预览

N105PH04

更新时间: 2024-11-05 18:30:23
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
3页 425K
描述
Silicon Controlled Rectifier, 172.7A I(T)RMS, 110000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element

N105PH04 技术参数

生命周期:Obsolete包装说明:POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
配置:SINGLE关态电压最小值的临界上升速率:200 V/us
最大直流栅极触发电流:150 mA最大直流栅极触发电压:3 V
最大维持电流:600 mAJESD-30 代码:O-MUPM-H3
最大漏电流:20 mA通态非重复峰值电流:2400 A
元件数量:1端子数量:3
最大通态电流:110000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
认证状态:Not Qualified最大均方根通态电流:172.7 A
重复峰值关态漏电流最大值:20000 µA断态重复峰值电压:400 V
重复峰值反向电压:400 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子形式:HIGH CURRENT CABLE
端子位置:UPPER触发设备类型:SCR
Base Number Matches:1

N105PH04 数据手册

 浏览型号N105PH04的Datasheet PDF文件第2页浏览型号N105PH04的Datasheet PDF文件第3页 

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Silicon Controlled Rectifier, 172.7A I(T)RMS, 110000mA I(T), 400V V(DRM), 400V V(RRM), 1 E
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Silicon Controlled Rectifier, 172.7A I(T)RMS, 110000mA I(T), 600V V(DRM), 600V V(RRM), 1 E
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Silicon Controlled Rectifier, 172.7A I(T)RMS, 110000mA I(T), 600V V(DRM), 600V V(RRM), 1 E
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Silicon Controlled Rectifier, 172.7A I(T)RMS, 110000mA I(T), 800V V(DRM), 800V V(RRM), 1 E
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Silicon Controlled Rectifier, 172.7A I(T)RMS, 110000mA I(T), 800V V(DRM), 800V V(RRM), 1 E
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Silicon Controlled Rectifier, 172.7A I(T)RMS, 110000mA I(T), 1200V V(DRM), 1200V V(RRM), 1
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Silicon Controlled Rectifier, 172.7A I(T)RMS, 110000mA I(T), 1400V V(DRM), 1400V V(RRM), 1
N105PH14KOO IXYS

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Silicon Controlled Rectifier, 172.7A I(T)RMS, 110000mA I(T), 1400V V(DRM), 1400V V(RRM), 1
N105PH14LOO IXYS

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Silicon Controlled Rectifier, 172.7A I(T)RMS, 110000mA I(T), 1400V V(DRM), 1400V V(RRM), 1
N105PH15 IXYS

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Silicon Controlled Rectifier, 172.7A I(T)RMS, 110000mA I(T), 1500V V(DRM), 1500V V(RRM), 1