Datasheet > N0600N

N0600N

更新时间： 2024-01-09 09:12:45

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	231K
描述
MOS FIELD EFFECT TRANSISTOR

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数据手册

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N0600N 数据手册

Preliminary Data Sheet

R07DS0220EJ0100

Rev.1.00

N0600N

MOS FIELD EFFECT TRANSISTOR

Jan 25, 2011

Description

The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

•

Low on-state resistance

⎯ R_DS(on)1= 25 mΩ MAX. (V_GS=10 V, I_D= 15 A)

⎯ R_DS(on)2= 36 mΩ MAX. (V_GS= 4.5 V, I_D= 15 A)

Low input capacitance

•

⎯ C_iss= 1380 pF TYP. (V_DS= 10 V, V_GS= 0 V)

Ordering Information

Part No.

N0600N-S17-AY ^∗

Lead Plating

Pure Sn (Tin)

Packing

Package

Isolated TO-220

typ. 2.2 g

Tube

50p/tube

Note: ^∗1. Pb-free (This product does not contain Pb in the external electrode and other parts.)

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

V_DSS

Ratings

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC)

V_GSS

I_D(DC)

I_D(pulse)

P_T1

Drain Current (pulse) ^∗

Total Power Dissipation (T_C= 25°C)

Total Power Dissipation (T_A= 25°C)

Channel Temperature

°C

P_T2

2.0

T_ch

150

Storage Temperature

Single Avalanche Current ^∗

Single Avalanche Energy ^∗

T_stg

−55 to +150

9.2

I_AS

E_AS

12.5

Thermal Resistance

Channel to Case (Drain) Thermal Resistance R_th(ch-C)

6.25

62.5

°C/W

Channel to Ambient Thermal Resistance ^∗

R_th(ch-A)

Notes: ^∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%

^∗2. Starting T_ch= 25°C, R_G= 25 Ω, V_DD= 30 V, V_GS= 20 → 0 V

R07DS0220EJ0100 Rev.1.00

Jan 25, 2011

Page 1 of 6

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