是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CXDB-X3 |
针数: | 3 | Reach Compliance Code: | unknown |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.92 |
配置: | SINGLE | 关态电压最小值的临界上升速率: | 1000 V/us |
最大直流栅极触发电流: | 200 mA | 最大直流栅极触发电压: | 3 V |
最大维持电流: | 500 mA | JESD-30 代码: | O-CXDB-X3 |
最大漏电流: | 40 mA | 通态非重复峰值电流: | 7100 A |
元件数量: | 1 | 端子数量: | 3 |
最大通态电流: | 1029000 A | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
最大均方根通态电流: | 1199 A | 断态重复峰值电压: | 2400 V |
重复峰值反向电压: | 2400 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | YES | 端子形式: | UNSPECIFIED |
端子位置: | UNSPECIFIED | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
N0606YS250 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1199A I(T)RMS, 2500V V(DRM), 2500V V(RRM), 1 Element, |
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N0607N | RENESAS |
获取价格 |
N-Channel Power Mosfet 60 V, 65 A, 8.4 MΩ |
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N0608N | RENESAS |
获取价格 |
N-Channel Power Mosfet 60 V, 52 A, 14.3 m? |
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N0609N | RENESAS |
获取价格 |
Power MOSFETs with Support for High-efficiency Drive and Low Heat Design |
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N060RH02GOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 98.91A I(T)RMS, 100000mA I(T), 200V V(DRM), 200V V(RRM), 1 E |
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N060RH04JOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 98.91A I(T)RMS, 100000mA I(T), 400V V(DRM), 400V V(RRM), 1 E |
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N060RH04KOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 98.91A I(T)RMS, 100000mA I(T), 400V V(DRM), 400V V(RRM), 1 E |
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N060RH06 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 98.91A I(T)RMS, 63000mA I(T), 600V V(DRM), 600V V(RRM), 1 El |
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N060RH06HOO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 98.91A I(T)RMS, 100000mA I(T), 600V V(DRM), 600V V(RRM), 1 E |
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N060RH08 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 98.91A I(T)RMS, 63000mA I(T), 800V V(DRM), 800V V(RRM), 1 El |
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