型号 | 品牌 | 获取价格 | 描述 | 数据表 |
N0604N-S19-AY | RENESAS |
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N-channel MOSFET Low on-state resistance | |
N0606YS200 | IXYS |
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Silicon Controlled Rectifier, 1199A I(T)RMS, 1029000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 | |
N0606YS200-240 | IXYS |
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Silicon Controlled Rectifier, 1201A I(T)RMS, 2400V V(DRM), 2400V V(RRM), 1 Element | |
N0606YS220 | IXYS |
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Silicon Controlled Rectifier, 1199 A, 2200 V, SCR, 101A335, 3 PIN | |
N0606YS240 | IXYS |
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Silicon Controlled Rectifier, 1199A I(T)RMS, 1029000mA I(T), 2400V V(DRM), 2400V V(RRM), 1 | |
N0606YS250 | IXYS |
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Silicon Controlled Rectifier, 1199A I(T)RMS, 2500V V(DRM), 2500V V(RRM), 1 Element, | |
N0607N | RENESAS |
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N-Channel Power Mosfet 60 V, 65 A, 8.4 MΩ | |
N0608N | RENESAS |
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N-Channel Power Mosfet 60 V, 52 A, 14.3 m? | |
N0609N | RENESAS |
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Power MOSFETs with Support for High-efficiency Drive and Low Heat Design | |
N060RH02GOO | IXYS |
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Silicon Controlled Rectifier, 98.91A I(T)RMS, 100000mA I(T), 200V V(DRM), 200V V(RRM), 1 E |