Datasheet > N0604N-S19-AY

N0604N-S19-AY

更新时间： 2022-04-16 22:22:19

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	148K
描述
N-channel MOSFET Low on-state resistance

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N0604N-S19-AY 数据手册

Data Sheet

N0604N

N-channel MOSFET

R07DS0850EJ0100

Rev.1.00

60 V, 82 A, 6.5 mΩ

Aug 27, 2012

Description

The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

• Low on-state resistance

R_{DS (on)}= 6.5 mΩ MAX. (V_GS= 10 V, I_D= 41 A)

• Low input capacitance

C_iss= 4150 pF TYP. (V_DS= 25 V, V_GS= 0 V)

• High current

I_D(DC)= ±82 A

• RoHS Compliant

Ordering Information

Part No.

N0604N-S19-AY ^∗

Lead Plating

Pure Sn (Tin)

Packing

Package

Tube

TO-220

50 p/tube

1.9 g TYP.

Note: ^∗1. Pb-free (This product does not contain Pb in the external electrode.)

Absolute Maximum Ratings (T_A= 25°C, all terminals are connected)

Item

Symbol

V_DSS

Ratings

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC)

V_GSS

I_D(DC)

I_D(pulse)

P_T1

±20

±82

Drain Current (pulse) ^∗

±200

116

Total Power Dissipation (T_C= 25°C)

Total Power Dissipation (T_A= 25°C)

Channel Temperature

°C

P_T2

1.5

T_ch

150

Storage Temperature

Single Avalanche Current ^∗

Single Avalanche Energy ^∗

T_stg

−55 to +150

I_AS

E_AS

125

Thermal Resistance

Channel to Case (Drain) Thermal Resistance R_th(ch-C)

1.08

83.3

°C/W

Channel to Ambient Thermal Resistance ^∗

R_th(ch-A)

Notes: ^∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%

^∗2. Starting T_ch= 25°C, R_G= 25 Ω, V_DD= 30 V, V_GS= 20 → 0 V, L = 100 μH

R07DS0850EJ0100 Rev.1.00

Aug 27, 2012

Page 1 of 6

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