Datasheet > N0604N-S19-AY

N0604N-S19-AY

更新时间： 2022-04-16 22:22:19

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	148K
描述
N-channel MOSFET Low on-state resistance

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N0604N-S19-AY 数据手册

N0604N

Chapter Title

Typical Characteristics (T_A= 25°C)

DERATING FACTOR OF FORWARD BIAS SAFE

OPERATING AREA

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

140

120

100

150

100

75 100 125 150 175

T_C- Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

1000

100

I_DC(pulse)= 200 A

10 ms

I_DC(DC)= 82 A

Power Dissipation Limited

T_C= 25°C

Single Pulse

0.1

100

V_DS- Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

100

R_th(ch-A)= 83.3 °C/W

R_th(ch-C)= 1.08 °C/W

0.1

0.01

Single pulse

0.1 m

1 m

10 m

100 m

100

1000

PW - Pulse Width - s

R07DS0850EJ0100 Rev.1.00

Aug 27, 2012

Page 3 of 6

1 234 5 6 7 8

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