Datasheet > N01L1618N1AB2

N01L1618N1AB2

更新时间： 2024-01-24 06:39:10

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
10页	223K
描述
1Mb Ultra-Low Power Asynchronous CMOS SRAM

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技术参数
数据手册

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N01L1618N1AB2 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

N01L1618N1AB2 数据手册

NanoAmp Solutions, Inc.

Ball Grid Array Package

N01L1618N1A

0.28±0.05

1.24±0.10

A1 BALL PAD

CORNER (3)

1. 0.35±0.05 DIA.

2. SEATING PLANE - Z

0.15

0.05

TOP VIEW

SIDE VIEW

1. DIMENSION IS MEASURED AT THE

MAXIMUM SOLDER BALL DIAMETER.

PARALLEL TO PRIMARY Z.

A1 BALL PAD

CORNER

2. PRIMARY DATUM Z AND SEATING

PLANE ARE DEFINED BY THE

SPHERICAL CROWNS OF THE

SOLDER BALLS.

3. A1 BALL PAD CORNER I.D. TO BE

MARKED BY INK.

K TYP

J TYP

BOTTOM VIEW

Dimensions (mm)

e = 0.75

BALL

MATRIX

TYPE

6±0.10

8±0.10

0.375

1.125

1.375

FULL

(DOC# 14-02-009 REV F ECN# 01-0995)

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

1...6 7 8910

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