Datasheet > N01L1618N1AB2

N01L1618N1AB2

更新时间： 2024-02-21 08:14:24

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
10页	223K
描述
1Mb Ultra-Low Power Asynchronous CMOS SRAM

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N01L1618N1AB2 技术参数

NanoAmp Solutions, Inc.

N01L1618N1A

Timing Waveform of Write Cycle (WE control)

Address

, t

LBW UBW

LB, UB

High-Z

Data Valid

Data In

Data Out

WHZ

High-Z

Timing Waveform of Write Cycle (CE Control)

Address

, t

LBW UBW

UB, LB

Data Valid

Data In

WHZ

High-Z

Data Out

(DOC# 14-02-009 REV F ECN# 01-0995)

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

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