Datasheet > N01L1618N1AB2

N01L1618N1AB2

更新时间： 2024-02-05 13:01:16

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
10页	223K
描述
1Mb Ultra-Low Power Asynchronous CMOS SRAM

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N01L1618N1AB2 技术参数

NanoAmp Solutions, Inc.

Timing of Read Cycle (CE = OE = V , WE = V )

N01L1618N1A

Address

Previous Data Valid

Data Valid

Data Out

Timing Waveform of Read Cycle (WE= V )

Address

OHZ

OLZ

LB, UB

LBLZ, UBLZ

LBHZ, UBHZ

High-Z

Data Valid

Data Out

(DOC# 14-02-009 REV F ECN# 01-0995)

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

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