Datasheet > MXUPS120EE3

MXUPS120EE3

更新时间： 2024-02-20 13:47:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
2页	115K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-1

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技术参数
数据手册

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MXUPS120EE3 技术参数

生命周期：	Active	零件包装代码：	DO-216
包装说明：	ROHS COMPLIANT, PLASTIC, POWERMITE-1	针数：	1
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.76
外壳连接：	CATHODE	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JEDEC-95代码：	DO-216AA	JESD-30 代码：	S-PSSO-G1
JESD-609代码：	e3	元件数量：	1
端子数量：	1	最高工作温度：	125 °C
最低工作温度：	-55 °C	最大输出电流：	1 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	SQUARE
封装形式：	SMALL OUTLINE	认证状态：	Not Qualified
最大重复峰值反向电压：	20 V	表面贴装：	YES
技术：	SCHOTTKY	端子面层：	MATTE TIN
端子形式：	GULL WING	端子位置：	SINGLE
Base Number Matches：	1

MXUPS120EE3 数据手册

UPS120Ee3

1.0 A Schottky Barrier Rectifier

KEY FEATURES

DESCRIPTION

The Microsemi UPS120Ee3 Powermite^®Schottky rectifier is RoHS

compliant and offers low leakage current and optimized forward voltage

characteristics with reverse blocking capabilities up to 20 Volt. They are

ideal for surface mount applications that operate at high frequencies.

In addition to its size advantages, Powermite^®package features include a

full metallic bottom that eliminates possibility of solder flux entrapment

during assembly, and a unique locking tab acts as an efficient heat path

from die to mounting plane for external heat sinking with very low thermal

resistance junction to case (bottom). Its innovative design makes this

device ideal for use with automatic insertion equipment.

Low thermal resistance DO-216AA package

RoHS Compliant with e3 suffix part number

Guard-ring-die construction for transient

protection

Efficient heat path with Integral locking

bottom metal tab

Low leakage current

Full metallic bottom eliminates flux

entrapment

Compatible with automatic insertion

Low profile-maximum height of 1mm

Options for screening in accordance with

MIL-PRF-19500 for JAN, JANTX, and

JANTXV are available by adding MQ, MX, or

MV prefixes respectively to part numbers.

For example, designate MXUPS120Ee3 for a

JANTX (consult factory for Tin-Lead plating).

Optional 100% avionics screening available

by adding MA prefix for 100% temperature

cycle, thermal impedance and 24 hours

HTRB (consult factory for Tin-Lead plating)

IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

Rating

Symbol

Value

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

APPLICATIONS/BENEFITS

Switching and Regulating Power Supplies.

Silicon Schottky (hot carrier) rectifier for

minimal reverse voltage recovery

Elimination of reverse-recovery oscillations

to reduce need for EMI filtering

RMS Reverse Voltage

V _{R (RMS)}

Average Rectified Output Current (at rated

V_R, T_C=135ºC)

Peak Repetitive Forward Current (at rated V_R,

square wave, 100kHz, T_C=135ºC)

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine wave

1.0

I_o

I_FRM

I_FSM

2.0

Charge Pump Circuits

Reduces reverse recovery loss with low I_RM

Small 8.45 mm²foot print

Voltage Rate of Change (rated V_R, TJ =25ºC)

dv/dt

T_STG

T_J

10,000

V/µs

ºC

(See mounting pad details next page)

Storage Temperature

-55 to +150

-55 to +125

MECHANICAL & PACKAGING

Junction Temperature

ºC

• CASE: Void-free transfer molded

thermosetting epoxy compound meeting

UL94V-0

• FINISH: Annealed matte-Tin plating over

copper and readily solderable per MIL-

STD-750 method 2026 (consult factory for

Tin-Lead plating)

THERMAL CHARACTERISTICS

(UNLESS OTHERWISE SPECIFIED)

Thermal Resistance

Junction-to-case (bottom)

Junction-to-ambient (1)

(1) When mounted on FR-4 PC board using 1 oz copper with recommended minimum foot print

R_θJC

R_θJA

240

ºC/ Watt

• POLARITY: See figure (left)

• MARKING: 20E•

• WEIGHT: 0.016 grams (approx.)

• Package dimension on last page

• Tape & Reel option: 12 mm tape per

Standard EIA-481-B, 3000 on 7 inch reel

and 12,000 on 13” reel

DO-216

See further details and dimensions on last page

6-26-2007 Rev C

Microsemi

Page 1

中文翻译

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与MXUPS120EE3相关器件

型号	品牌	获取价格	描述	数据表
MXUPS140E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, P
MXUPS160E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, P
MXUPS3100E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, ROHS COMPLIANT, P
MXUPS360E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 60V V(RRM), Silicon, ROHS COMPLIANT, PL
MXUPS5100E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, ROHS COMPLIANT, P
MXUPS540E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon, ROHS COMPLIANT, PL
MXUPS560E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 60V V(RRM), Silicon, ROHS COMPLIANT, PL
MXUPS5817E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MXUPS5817E3TR13	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE
MXUPS5817E3TR7	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWE

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