Datasheet > MXUPS84E3

MXUPS84E3

更新时间： 2024-09-26 05:42:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
2页	123K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, 2 PIN

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技术参数
数据手册

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MXUPS84E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	R-PSSO-G2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.28	应用：	GENERAL PURPOSE
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	元件数量：	1
相数：	1	端子数量：	2
最高工作温度：	125 °C	最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	最大重复峰值反向电压：	40 V
表面贴装：	YES	技术：	SCHOTTKY
端子面层：	MATTE TIN	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MXUPS84E3 数据手册

UPS840e3

POWERMITE 3™ SURFACE MOUNT

8 AMP 40 V SCHOTTKY RECTIFIER

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The UPS840e3 offers a small and powerful surface mount package that is

RoHS compliant for a 40 Volt 8 Amp rated Schottky. These ratings are found

only in much larger packages. They are ideal for surface mount applications

that operate at high frequencies with their “hot carrier” features that provide

extremely fast switching. The very low thermal resistance of the patented

Powermite 3™ package design with a full metallic bottom and unique locking

tab act as an efficient heat path to a heat sink mounting permitting cooler operating

junction temperatures for minimal reverse leakage currents and lower power

loss. It is also ideal for automatic insertion equipment

Powermite 3™

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Low profile package (<1.1 mm)

Small footprint area of 16.51 mm²

•

High current capability with low forward voltage

Guard-ring-die construction for transient protection

Plastic package has Underwriters Laboratory

Flammability classification 94V-0

•

Silicon Schottky (hot carrier) rectifier for minimal t

and minimal reverse recovery voltage

•

Unique locking tab on bottom acts as integral efficient

heat path to heat sink (mounting substrate)

Elimination of reverse-recovery oscillations to

reduce need for EMI filtering

•

Metal to silicon rectifier, majority carrier conduction

RoHS compliant with e3 suffix part number

For use in high-frequency switching power supplies,

inverters, free wheeling, charge pump circuits and

polarity protection applications

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers. For example, designate

a MXUPS840e3 for a JANTX screen. Consult factory

for Tin-Lead plating.

Optional avionics screening available by adding MA

prefix for 100% temperature cycling, thermal

impedance testing, and 24 hours HTRB. For example,

designate a MAUPS840e3. Consult factory for Tin-

Lead plating.

•

Lower forward power loss and high efficiency

Low inductive parasitics (<2nH) for minimal Ldi/dt

effects

•

Robust package configuration for pick-and-place

handling

•

Full-metallic bottom eliminates flux entrapment

Small foot print with 0.190 x 0.270 inches (see

mounting pad details on last page)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Storage temperature (T_STG): -55 ^oC to +150^oC

•

Terminals: Copper with annealed matte-Tin plating

for RoHS compliance solderable per MIL-STD-750

method 2026 (consult factory for Tin-Lead plating.)

Polarity: Two-leads on side are internally

connected together for anode and backside is

cathode

Marking: Body marked with S840•

Molded epoxy package meets UL94V-0

Weight: 0.072 grams (approximate)

Operating junction temperature (T_J): -55 ^oC to +125^oC

Average forward rectified current (I_O) @T_C=100^oC: 8.0

Amps

•

Forward surge current (I_FSM) 8.3 ms single half-sine

waveform superimposed on rated load (JEDEC

Method): 150 Amps

Thermal resistance (R_θJC): 2.5 ^oC/W

Thermal resistance (R_θJA): 65 ^oC/W on PCB with FR4

using 2 oz Copper and recommended mounting pad size

(see pad layout next page)

•

Tape & Reel packaging per EIA-481-2 with 16 mm

tape and 5000 units/ 13 inch reel)

•

See package dimensions on last page

•

Typical junction capacitance (C_J) at 1.0 MHz and V_Rof

4.0 Volts: 700 pF

Solder temperatures: 260 ^ºC for 10 s (maximum)

5-02-05 REV A

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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与MXUPS84E3相关器件

型号	品牌	获取价格	描述	数据表
MXUPT10	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
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MXUPT10E3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXUPT10R	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXUPT10RE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXUPT10RE3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXUPT10RTR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXUPT10RTR13E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXUPT10RTR7E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXUPT10TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

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