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MXUPT10

更新时间： 2024-02-29 17:34:01
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
5页 451K
描述
Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-216AA, PLASTIC, POWERMITE-2

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MXUPT10 技术参数

是否Rohs认证： 不符合生命周期：Active
零件包装代码：DO-216AA包装说明：R-PDSO-G1
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.82最小击穿电压：11 V
外壳连接：ANODE配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-216AAJESD-30 代码：R-PDSO-G1
JESD-609代码：e0湿度敏感等级：1
最大非重复峰值反向功率耗散：150 W元件数量：1
端子数量：1封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：2.5 W认证状态：Not Qualified
最大重复峰值反向电压：10 V表面贴装：YES
技术：AVALANCHE端子面层：TIN LEAD
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MXUPT10 数据手册

 浏览型号MXUPT10的Datasheet PDF文件第2页浏览型号MXUPT10的Datasheet PDF文件第3页浏览型号MXUPT10的Datasheet PDF文件第4页浏览型号MXUPT10的Datasheet PDF文件第5页 
MUPT5e3 – MUPT48e3  
and MUPTB5e3 – MUPTB48e3  
High-Reliability  
Screening available in  
reference to  
5V – 48V Powermite1, Surface Mount  
Available  
Transient Voltage Suppressors  
MIL-PRF-19500  
DESCRIPTION  
Tested in accordance  
with the requirements of  
AEC-Q101  
Microsemi’s unique and new Powermite MUPT series of transient voltage suppressors feature  
oxide-passivated chips with high-temperature solder bonds for high surge capability and negligible  
electrical degradation under repeated surge conditions. Both unidirectional and bidirectional  
configurations are available. In addition to its size advantages, the Powermite package includes a  
fully metallic bottom (anode) side that eliminates the possibility of solder flux entrapment at  
assembly and a unique locking tab design serves as an integral heat sink. Its innovative design  
makes this device fully compatible for use with automatic insertion equipment.  
Important: For the latest information, visit our website http://www.microsemi.com.  
FEATURES  
Powermite package with standoff voltages 5 to 48 V.  
Both unidirectional and bidirectional polarities:  
-Anode to case bottom (MUPT5e3 thru MUPT48e3)  
-Bidirectional (MUPTB5e3 thru MUPTB48e3)  
Clamping time less than 100 pico-seconds for unidirectional and 5 nano-seconds for bidirectional.  
100% surge current testing of all parts.  
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.  
Both RoHS and non-RoHS compliant versions available.  
DO-216AA  
Package  
APPLICATIONS / BENEFITS  
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Protection from switching and induced RF transients.  
-Integral heat sink / locking tabs  
-Fully metallic bottom side eliminates flux entrapment  
Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively.  
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:  
Class 1: MUPT5 /MUPTB8 to 17  
Class 2: MUPT5 /MUPTB5 to 12  
MAXIMUM RATINGS  
Power Discretes & Modules  
Business Unit  
Discrete Products Group  
Microsemi Corporation  
Parameters/Test Conditions  
Symbol  
TJ / TSTG  
RӨJA  
Value  
Unit  
oC  
Junction and Storage Temperature  
Thermal Resistance Junction-to-Ambient (1)  
Thermal Resistance Junction-to-Case (base tab)  
Peak Pulse Power (see Figure 1 and Figure 2)  
MUPT5e3 thru MUPT48e3:  
-65 to +150  
240  
oC/W  
oC/W  
PDM – Lawrence  
6 Lake Street,  
Lawrence, MA 01841  
Tel: 1-800-446-1158 or  
(978) 620-2600  
RӨJC  
15  
@ 8/20 µs @10/1000µs  
PPP  
PM(AV)  
TSP  
1000  
1000  
150  
150  
MUPTB5e3 thru MUPTB48e3:  
W
W
Fax: (978) 689-0803  
PDM – Ireland  
Rated Average Power Dissipation  
(base tab < 112 oC)  
2.5  
Gort Road Business Park,  
Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044  
Fax: +353 (0) 65 6822298  
Impulse Repetition Rate (duty factor)  
Solder Temperature @ 10 s  
0.01  
260  
%
oC  
Notes: 1. When mounted on FR4 PC board with 1 oz copper.  
Website:  
www.microsemi.com  
RF01103-1, Rev. B (19/05/17)  
©2017 Microsemi Corporation  
Page 1 of 5  
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