MXP5KE90CE3

更新时间： 2024-10-29 04:36:51

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管瞬态抑制器
页数	文件大小	规格书
4页	195K
描述
Trans Voltage Suppressor Diode, 500W, 90V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MXP5KE90CE3 数据手册

P5KE5.0 thru P5KE170CA, e3

500 W TRANSIENT VOLTAGE

SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This P5KE series is an economical 500 W Transient Voltage Suppressor

(TVS) for protecting voltage-sensitive components from destruction or

DO-41

(DO-204AL)

degradation.

It is available in both unidirectional and bi-directional

configurations as well as RoHS Compliant (annealed matte-Tin Finish) with

an e3 suffix added to the part number. The response time of their clamping

action is virtually instantaneous. As a result, they may also be used

effectively for protection from ESD or EFT per IEC61000-4-2 and IEC61000-

4-4 or for inductive switching environments and induced RF. They can also

be used for protecting other sensitive components from secondary lightning

effects per IEC61000-4-5 and class levels defined herein. Microsemi also

offers numerous other TVS products to meet higher and lower power

demands and special applications.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Available in both unidirectional and bidirectional

(add C or CA suffix to part number for bidirectional)

Suppresses transients up to 500 watts @ 10/1000 µs

•

Protects sensitive components such as IC’s,

CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.

•

Selections for 5.0 to 170 V standoff voltage (V_WM

Economical series for thru-hole mounting

Similar to SA5.0 thru SA170 series

)

•

Optional 100% screening for avionics grade is

available by adding MA prefix to part number for added

100% temperature cycle -55^oC to +125^oC (10X) as well

as surge (3X) and 24 hours HTRB with post test V_Z&

I_R(in the operating direction for unidirectional or both

directions for bidirectional)

Protection from switching transients & induced RF

Fast response

Compliant to IEC61000-4-2 and IEC61000-4-4 for

ESD and EFT protection respectively

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are also

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers.

•

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

Class 1: P5KE5.0 to P5KE120A or CA

Class 2: P5KE5.0 to P5KE60A or CA

Class 3: P5KE5.0 to P5KE30A or CA

Class 4: P5KE5.0 to P5KE15A or CA

Surface mount equivalents available as SMAJ5.0 to

SMAJ170CA (consult factory for other surface mount

options)

•

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

•

Secondary lightning protection per IEC61000-4-5

with 12 Ohms source impedance:

RoHS Compliant devices available by adding “e3” suffix

Class 1: P5KE5.0 to P5KE36A or CA

Class 2: P5KE5.0 to P5KE18A or CA

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• Operating and Storage Temperature: -65°C to +150°C

•

Void-free transfer molded thermosetting epoxy body

meeting UL94V-0

• Peak Pulse Power: 500 Watts at 10/1000 μs (see Figure

FINISH: Tin-Lead or RoHS Compliant annealed

matte-Tin plating readily solderable per MIL-STD-

750, method 2026

1, 2 and 3 for t_W, waveform and derating effects)

• Impulse repetition rate (duty factor): 0.01%

• Thermal Resistance: 45°C/W junction to leads @ 3/8

inch (10 mm) from body, or 105°C/W junction to ambient

when mounted on FR4 PC board with 4 mm²copper

pads (1 oz) and track width 1 mm, length 25 mm

•

MARKING: Body marked with part number

POLARITY: Band denotes cathode. Bidirectional

not marked

•

WEIGHT: 0.3 grams (approximate)

• Steady-State Power: 2.77 Watts @ T_L=25°C at 3/8 inch

(10 mm) from body, or 1.19 W at T_A= 25^ºC on FR4 PC

board described for thermal resistance

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

• Forward Voltage at 25°C: 3.5 V @ 30 A with 8.3 ms

•

See package dimensions on last page

half-sine wave (unidirectional only)

• Solder temperatures: 260 °C for 10 s (maximum)

8-04-2005 REV D

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与MXP5KE90CE3相关器件

型号	品牌	获取价格	描述	数据表
MXP5KE90CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 90V V(RWM), Bidirectional, 1 Element, Silicon, DO-20
MXP5KE90CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 90V V(RWM), Bidirectional, 1 Element, Silicon, DO-20
MXP5KE90E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 90V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXP5KE90TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 90V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXP63RHFFREQ	MTRONPTI	获取价格	LVDS Output Clock Oscillator, 0.75MHz Min, 800MHz Max,
MXP63RLFFREQ	MTRONPTI	获取价格	LVDS Output Clock Oscillator, 0.75MHz Min, 800MHz Max,
MXP63RPFFREQ	MTRONPTI	获取价格	PECL Output Clock Oscillator, 0.75MHz Min, 800MHz Max,
MXP63RQFFREQ	MTRONPTI	获取价格	PECL Output Clock Oscillator, 0.75MHz Min, 800MHz Max,
MXP64RHFFREQ	MTRONPTI	获取价格	LVDS Output Clock Oscillator, 0.75MHz Min, 800MHz Max,
MXP64RLFFREQ	MTRONPTI	获取价格	LVDS Output Clock Oscillator, 0.75MHz Min, 800MHz Max,

与MXP5KE90CE3相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

13
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

13
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

40
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

47

产品中心

服务支持

精选活动

关于我们

帮助中心

MXP5KE90CE3

MXP5KE90CE3 数据手册

与MXP5KE90CE3相关器件

与MXP5KE90CE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MXP5KE90CE3

MXP5KE90CE3 数据手册

与MXP5KE90CE3相关器件

与MXP5KE90CE3相关文章

您还可以找

您在本页遇到什么问题？