生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.57 | 最长下降时间: | 2 ns |
频率调整-机械: | NO | 频率稳定性: | 20% |
安装特点: | SURFACE MOUNT | 最大工作频率: | 800 MHz |
最小工作频率: | 0.75 MHz | 最高工作温度: | 70 °C |
最低工作温度: | -20 °C | 振荡器类型: | PECL |
物理尺寸: | 14.48mm x 9.27mm x 6.6mm | 最长上升时间: | 2 ns |
标称供电电压: | 3.3 V | 表面贴装: | YES |
最大对称度: | 40/60 % | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MXP6KCE30CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 25.6V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
MXP6KCE30CE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 24.3V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
MXP6KCE33CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 28.2V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
MXP6KCE33CE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 26.8V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
MXP6KE10 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 8.1V V(RWM), Unidirectional, 1 Element, Silicon, PLA | |
MXP6KE100 | MICROSEMI |
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Trans Voltage Suppressor Diode, 600W, 81V V(RWM), Unidirectional, 1 Element, Silicon, PLAS | |
MXP6KE100AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, RO | |
MXP6KE100ATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, PL | |
MXP6KE100C | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 81V V(RWM), Bidirectional, 1 Element, Silicon, PLAST | |
MXP6KE100CAE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 85.5V V(RWM), Bidirectional, 1 Element, Silicon, ROH |