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MXP4005 PDF预览

MXP4005

更新时间: 2024-09-15 21:53:51
品牌 Logo 应用领域
美高森美 - MICROSEMI 半导体光电二极管光电二极管
页数 文件大小 规格书
2页 121K
描述
InGaAs/InP PIN Photo Diode

MXP4005 技术参数

生命周期:Obsolete包装说明:DIE-2
Reach Compliance Code:compliantHTS代码:8541.40.60.10
风险等级:5.84Is Samacsys:N
配置:SINGLE最大暗电源:1 nA
红外线范围:YES功能数量:1
最高工作温度:85 °C最低工作温度:-20 °C
光电设备类型:PIN PHOTODIODE最小反向击穿电压:20 V
最大反向电压:20 V半导体材料:InGaAs/InP
形状:ROUND尺寸:0.04 mm
子类别:Photo DiodesBase Number Matches:1

MXP4005 数据手册

 浏览型号MXP4005的Datasheet PDF文件第2页 
Obsolete Product – not recommended for new design  
MXP4005 – 12.7 Gbps  
InGaAs/InP PIN Photo Diode  
O P T O - E L E C T R O N I C P R O D U C T S  
P R O D U C T I O N D A T A S H E E T  
KEY FEATURES  
DESCRIPTION  
Microsemi’s InGaAs/InP PIN Photo  
The MXP400X series of photo  
ƒ High Responsivity  
Diode chips are ideal for high bandwidth diodes are currently offered in die  
1310nm and 1550nm optical networking form allowing manufacturers the  
ƒ Low Dark Current  
ƒ Extremely Low Capacitance  
ƒ 12GHz , High Bandwidth  
ƒ Custom Sub-mounts  
ƒ Large 40um Bond Pad  
applications.  
versatility of custom assembly  
The device series offers superior noise configurations.  
performance and sensitivity due to their  
planar construction and passivation.  
This device is ideal for manu-  
facturers of optical receivers,  
transponders, optical transmission  
modules and combination PIN photo  
diode – transimpedance amplifier.  
Microsemi will assemble die on  
submounts and custom confi-  
gurations.  
APPLICATIONS  
ƒ 1310nm CATV Optical Applications  
ƒ 1550nm DWDM Optical Applications  
ƒ SONET/SDH (FEC), ATM  
ƒ 10Gigabit Ethernet, Fibre Channel  
ƒ 10Gbps NRZ or RZ modulation  
ƒ Optical Test equipment  
BENEFITS  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
ƒ Planar passivation  
ƒ Low Contact Resistance  
PRODUCT HIGHLIGHT  
508um  
Typical Spectral Responsivity  
± 25um  
Ø 40um ±  
1.2  
1.0  
Bond  
MXP4  
0.8  
0.6  
0.4  
0.2  
0.0  
45  
508um  
± 25um  
800 900 1000 1100 1200 1300 1400 1500 1600 1700  
Wavelength (nm)  
MICROS  
Active Area  
20um  
Anod  
150  
± 20um  
508um  
± 25um  
Copyright © 2001  
Rev. 1.1  
Microsemi  
Page 1  
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570  

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