是否Rohs认证: | 不符合 | 生命周期: | Active |
零件包装代码: | DO-41 | 包装说明: | O-PALF-W2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.28 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 最大击穿电压: | 7.14 V |
最小击穿电压: | 6.45 V | 击穿电压标称值: | 6.8 V |
外壳连接: | ISOLATED | 最大钳位电压: | 10.5 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-204AL |
JESD-30 代码: | O-PALF-W2 | JESD-609代码: | e0 |
最大非重复峰值反向功率耗散: | 400 W | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | LONG FORM |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 2.5 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 5.8 V |
子类别: | Transient Suppressors | 表面贴装: | NO |
技术: | AVALANCHE | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MXLP4KE6.8CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 5.8V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
MXLP4KE6.8CATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 5.8V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
MXLP4KE6.8CE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode | |
MXLP4KE62 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode | |
MXLP4KE62A | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 53V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MXLP4KE62AE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 53V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MXLP4KE62ATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 53V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MXLP4KE62CA | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 53V V(RWM), Bidirectional, 1 Element, Silicon, DO-20 | |
MXLP4KE62CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 53V V(RWM), Bidirectional, 1 Element, Silicon, DO-20 | |
MXLP4KE62CAE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 400W, 53V V(RWM), Bidirectional, 1 Element, Silicon, DO-20 |