Datasheet > MXHSMBJSAC75E3

MXHSMBJSAC75E3

更新时间： 2024-09-16 08:12:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	162K
描述
Trans Voltage Suppressor Diode, 500W, 75V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

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MXHSMBJSAC75E3 数据手册

HSMBJSAC5.0 thru HSMBJSAC75, e3

500 WATT LOW CAPACITANCE

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The HSMBJSAC transient voltage suppressor (TVS) series rated at 500

Watts provides an added rectifier element as shown in Figure 4 to achieve

low capacitance in applications for data or signal lines. The low capacitance

rating of less than 30 pF may be used for protecting higher frequency

applications in inductive switching environments or electrical systems

involving secondary lightning effects per IEC61000-4-5 as well as

RTCA/DO-160D or ARINC 429 for airborne avionics. If bidirectional

protection is needed, two HSMBJSAC devices in anti-parallel configuration

are required as shown in Figure 6. With their very fast response time, they

also provide ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4

DO-214AA

See package notes

respectively.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Unidirectional low-capacitance TVS series (for

bidirectional see Figure 6)

•

Low Capacitance for data-line protection to 10 MHz

Protection for aircraft fast data rate lines per select

waveforms in RTCA/DO-160D (see MicroNote 130

for Waveform 4 and 5A capability) & ARINC 429

with bit rates of 100 kb/s (per ARINC 429, Part 1,

par. 2.4.1.1)

Suppresses transient up to 500 Watts Peak Pulse

Power @ 10/1000 µs

•

Improved performance in low capacitance of 30 pF

Economical small plastic surface mount with robust axial

subassembly package

•

ESD and EFT protection per IEC61000-4-2 and

IEC61000-4-4 respectively

•

Optional 100% screening for avionics grade is

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

available by adding MA prefix to part number for added

100% temperature cycle -55^oC to +125^oC (10X) as well

as surge (3X) and 24 hours HTRB with post test V_Z& I_R

Class 1: HSMBJSAC5.0 to HSMBJSAC75

Class 2: HSMBJSAC5.0 to HSMBJSAC45

Class 3: HSMBJSAC5.0 to HSMBJSAC22

Class 4: HSMBJSAC5.0 to HSMBJSAC10

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, and JANTXV are also available

by adding MQ, MX, or MV prefixes respectively to part

number, e.g. MXHSMBJSAC5.0, MVHSMBJSAC18, etc.

•

Secondary lightning protection per IEC61000-4-5

with 12 Ohms source impedance

Class 1: HSMBJSAC5.0 to HSMBJSAC26

Class 2: HSMBJSAC5.0 to HSMBJSAC15

Class 3: HSMBJSAC5.0 to HSMBJSAC7.0

•

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

Also available in axial-leaded packages with part

numbers (SAC5.0 thru SAC50)

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Peak Pulse Power Dissipation at 25^oC: 500 Watts @

•

CASE: Void Free Transfer Molded Thermosetting

Plastic package meeting UL94V-0

10/1000 μs with repetition rate of 0.01% or less*

Steady State Power Dissipation*: 2.5 Watts @ T_L

FINISH: Tin-Lead or RoHS Compliant matte-Tin

plating solderable per MIL-STD-750, method 2026

=+75^oC

•

POLARITY: Cathode (TVS) Marked with Band

Clamping Speed (0 volts to V_(BR)Min.) less than 5

nanoseconds.

Operating and Storage Temperature: -65^oC to +150^oC

Solder temperatures: 260^oC for 10 s maximum

MARKING: Part number without HSMBJ prefix (ie.

SAC5.0, SAC5.0e3, etc)

•

WEIGHT: 0.1 Grams (Approx.)

See package dimensions on last page

* TVS devices are not typically used for dc power dissipation and are instead operated < V_WM(rated standoff voltage) except for transients

that briefly drive the device into avalanche breakdown (V_BRto V_Cregion) of the TVS element. Also see Figures 5 and 6 for further

protection details in rated peak pulse power for unidirectional and bidirectional configurations respectively.

Microsemi

Page 1

10-20-2007 REV H

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与MXHSMBJSAC75E3相关器件

型号	品牌	获取价格	描述	数据表
MXHSMBJSAC8.0	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
MXHSMBJSAC8.5E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MXHSMBSAC10	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBSAC15	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBSAC18	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBSAC22	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 22V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBSAC26	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBSAC36	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBSAC45	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 45V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBSAC5.0	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-21

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