Datasheet > MXHSMBJ5956CTR

MXHSMBJ5956CTR

更新时间： 2024-10-30 13:27:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		测试光电二极管
页数	文件大小	规格书
3页	131K
描述
Zener Diode, 200V V(Z), 2%, 1.56W, Silicon, Unidirectional, DO-214AA, PLASTIC PACKAGE-2

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MXHSMBJ5956CTR 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DO-214AA	包装说明：	PLASTIC PACKAGE-2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.92	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
JEDEC-95代码：	DO-214AA	JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e0	湿度敏感等级：	1
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	1.56 W
认证状态：	Not Qualified	标称参考电压：	200 V
表面贴装：	YES	技术：	ZENER
端子面层：	TIN LEAD	端子形式：	C BEND
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
最大电压容差：	2%	工作测试电流：	1.9 mA
Base Number Matches：	1

MXHSMBJ5956CTR 数据手册

HSMBJ5913 thru HSMBJ5956, e3

SILICON 3.0 Watt ZENER DIODE

S C O T T S D A L E D I V I S I O N

DESCRIPTION

PACKAGE

The HSMBJ5913-5956B series of surface mount 3.0 watt Zeners provides

voltage regulation in a selection from 3.3 to 200 volts with different tolerances

as identified by suffix letter on the part number. It is equivalent to the JEDEC

registered 1N5913 thru 1N5956B with identical electrical characteristics

except it is rated at 3.0 W instead of 1.5 W with the lower thermal resistance

features of this surface mount packaging. These plastic encapsulated Zeners

have a moisture classification of Level 1 with no dry pack required and are

also available in military equivalent screening levels by adding a prefix

identifier as further described in the Features section. Microsemi also offers

numerous other Zener products to meet higher and lower power applications.

DO-214AA

(see package notes)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Surface mount equivalent to 1N5913 to

1N5956B

•

Regulates voltage over a broad operating current

and temperature range

•

Ideal for high-density and low-profile mounting

Zener voltage available 3.3V to 200V

•

Wide selection from 3.3 to 200 V

Flexible axial-lead mounting terminals

Standard voltage tolerances are plus/minus 5%

with B suffix and 10 % with A suffix identification

Nonsensitive to ESD per MIL-STD-750 Method

1020

•

Tight tolerances available in plus or minus 2% or

1% with C or D suffix respectively

•

High specified maximum current (I_ZM) when

adequately heat sinking

RoHS Compliant devices available by adding

“e3’ suffix

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

Options for screening in accordance with MIL-

PRF-19500 for JAN, JANTX, JANTXV, and

JANS are available by adding MQ, MX, MV, or

MSP prefixes respectively to part numbers.

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Power dissipation at 25^ºC: 3.0 watts (also see

derating in Figure 1).

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

Operating and Storage temperature: -65^ºC to

•

TERMINALS: C-bend (modified J-bend) leads, Tin-

Lead or RoHS Compliant annealed matte-Tin

plating solderable per MIL-STD-750, method 2026

+150^ºC

Thermal Resistance: 15 ^ºC/W junction to lead,

or 80^ºC/W junction to ambient when mounted on

FR4 PC board (1oz Cu) with recommended

footprint (see last page)

POLARITY: Cathode indicated by band. Diode to

be operated with the banded end positive with

respect to the opposite end for Zener regulation

•

Steady-State Power: 3 watts at T_L< 105^oC, or

1.56 watts at T_A= 25^ºC when mounted on FR4

PC board with recommended footprint (also see

Figure1)

•

MARKING: Includes part number without prefix

(e.g. 5913B, 5926C, 5951D, etc.)

TAPE & REEL option: Standard per EIA-481-1-A

with 12 mm tape 750 per 7 inch reel or 2500 per 13

inch reel (add “TR” suffix to part number)

•

Forward voltage @200 mA: 1.2 volts

(maximum)

Solder Temperatures: 260 ^ºC for 10 s

(maximum)

•

WEIGHT: 0.1 grams

•

See package dimensions on last page

3-12-2006 REV G

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

下载PDF

与MXHSMBJ5956CTR相关器件

型号	品牌	获取价格	描述	数据表
MXHSMBJ5956D	MICROSEMI	获取价格	Zener Diode, 200V V(Z), 1%, 1.56W, Silicon, Unidirectional, DO-214AA, PLASTIC PACKAGE-2
MXHSMBJ5956DE3	MICROSEMI	获取价格	Zener Diode, 200V V(Z), 1%, 1.56W, Silicon, Unidirectional, DO-214AA, ROHS COMPLIANT, PLAS
MXHSMBJ5956DE3TR	MICROSEMI	获取价格	Zener Diode, 200V V(Z), 1%, 1.56W, Silicon, Unidirectional, DO-214AA, ROHS COMPLIANT, PLAS
MXHSMBJ5956DTR	MICROSEMI	获取价格	Zener Diode, 200V V(Z), 1%, 1.56W, Silicon, Unidirectional, DO-214AA, PLASTIC PACKAGE-2
MXHSMBJ5956E3TR	MICROSEMI	获取价格	Zener Diode, 200V V(Z), 20%, 1.56W, Silicon, Unidirectional, DO-214AA, ROHS COMPLIANT, PLA
MXHSMBJSAC10	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBJSAC10E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBJSAC12	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBJSAC12E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBJSAC15	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

与MXHSMBJ5956CTR相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

19
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

20
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

45
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

52

产品中心

服务支持

精选活动

关于我们

帮助中心

MXHSMBJ5956CTR

MXHSMBJ5956CTR 技术参数

MXHSMBJ5956CTR 数据手册

与MXHSMBJ5956CTR相关器件

与MXHSMBJ5956CTR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MXHSMBJ5956CTR

MXHSMBJ5956CTR 技术参数

MXHSMBJ5956CTR 数据手册

与MXHSMBJ5956CTR相关器件

与MXHSMBJ5956CTR相关文章

您还可以找

您在本页遇到什么问题？