Datasheet > MXHSMBJ5956E3TR

MXHSMBJ5956E3TR

更新时间： 2024-10-31 04:33:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	124K
描述
Zener Diode, 200V V(Z), 20%, 1.56W, Silicon, Unidirectional, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

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MXHSMBJ5956E3TR 数据手册

HSMBJ5913 thru HSMBJ5956, e3

SILICON 3.0 Watt ZENER DIODE

S C O T T S D A L E D I V I S I O N

DESCRIPTION

PACKAGE

The HSMBJ5913-5956B series of surface mount 3.0 watt Zeners provides

voltage regulation in a selection from 3.3 to 200 volts with different tolerances

as identified by suffix letter on the part number. It is equivalent to the JEDEC

registered 1N5913 thru 1N5956B with identical electrical characteristics

except it is rated at 3.0 W instead of 1.5 W with the lower thermal resistance

features of this surface mount packaging. These plastic encapsulated Zeners

have a moisture classification of Level 1 with no dry pack required and are

also available in military equivalent screening levels by adding a prefix

identifier as further described in the Features section. Microsemi also offers

numerous other Zener products to meet higher and lower power applications.

DO-214AA

(see package notes)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Surface mount equivalent to 1N5913 to

1N5956B

•

Regulates voltage over a broad operating current

and temperature range

•

Ideal for high-density and low-profile mounting

Zener voltage available 3.3V to 200V

•

Wide selection from 3.3 to 200 V

Flexible axial-lead mounting terminals

Standard voltage tolerances are plus/minus 5%

with B suffix and 10 % with A suffix identification

Nonsensitive to ESD per MIL-STD-750 Method

1020

•

Tight tolerances available in plus or minus 2% or

1% with C or D suffix respectively

•

High specified maximum current (I_ZM) when

adequately heat sinking

RoHS Compliant devices available by adding

“e3’ suffix

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

Options for screening in accordance with MIL-

PRF-19500 for JAN, JANTX, JANTXV, and

JANS are available by adding MQ, MX, MV, or

MSP prefixes respectively to part numbers.

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Power dissipation at 25^ºC: 3.0 watts (also see

derating in Figure 1).

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

Operating and Storage temperature: -65^ºC to

•

TERMINALS: C-bend (modified J-bend) leads, Tin-

Lead or RoHS Compliant annealed matte-Tin

plating solderable per MIL-STD-750, method 2026

+150^ºC

Thermal Resistance: 15 ^ºC/W junction to lead,

or 80^ºC/W junction to ambient when mounted on

FR4 PC board (1oz Cu) with recommended

footprint (see last page)

POLARITY: Cathode indicated by band. Diode to

be operated with the banded end positive with

respect to the opposite end for Zener regulation

•

Steady-State Power: 3 watts at T_L< 105^oC, or

1.56 watts at T_A= 25^ºC when mounted on FR4

PC board with recommended footprint (also see

Figure1)

•

MARKING: Includes part number without prefix

(e.g. 5913B, 5926C, 5951D, etc.)

TAPE & REEL option: Standard per EIA-481-1-A

with 12 mm tape 750 per 7 inch reel or 2500 per 13

inch reel (add “TR” suffix to part number)

•

Forward voltage @200 mA: 1.2 volts

(maximum)

Solder Temperatures: 260 ^ºC for 10 s

(maximum)

•

WEIGHT: 0.1 grams

•

See package dimensions on last page

3-12-2006 REV G

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与MXHSMBJ5956E3TR相关器件

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MXHSMBJSAC10	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBJSAC10E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBJSAC12	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBJSAC12E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBJSAC15	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBJSAC18E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBJSAC22	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 22V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBJSAC22E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 22V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBJSAC26	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXHSMBJSAC26E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

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