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MX6075US PDF预览

MX6075US

更新时间： 2024-11-04 21:02:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
3页 121K
描述
Rectifier Diode, 1 Element, Silicon, HERMETIC SEALED, GLASS, A, MELF-2

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中文翻译

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MX6075US 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：MELF包装说明：O-LELF-R2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.75Is Samacsys：N
其他特性：HIGH RELIABILITY外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJESD-30 代码：O-LELF-R2
JESD-609代码：e0元件数量：1
端子数量：2最高工作温度：155 °C
最低工作温度：-65 °C封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
表面贴装：YES端子面层：TIN LEAD
端子形式：WRAP AROUND端子位置：END
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MX6075US 数据手册

 浏览型号MX6075US的Datasheet PDF文件第2页浏览型号MX6075US的Datasheet PDF文件第3页 
1N6073US thru 1N6081US  
VOIDLESS HERMETICALLY SEALED  
SURFACE MOUNT ULTRA FAST  
RECOVERY GLASS POWER  
RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “Ultrafast Recovery” rectifier diode series is ideal for high-reliability  
applications where a failure cannot be tolerated. These 3, 6, and 12 Amp rated  
rectifiers (TEC =70ºC) in different package sizes with working peak reverse  
voltages from 50 to 150 volts are hermetically sealed using voidless-glass  
construction and an internal “Category I” metallurgical bond. These devices  
are also available in axial-lead package configurations for through-hole  
mounting by deleting the “US” suffix (see separate data sheet for 1N6073 thru  
1N6081). Microsemi also offers numerous other rectifier products to meet  
higher and lower current ratings with various recovery time speed requirements  
including standard, fast and ultrafast device types in both through-hole and  
surface mount packages.  
Package “A”  
(or “D-5A”)  
Package “E”  
(or “D-5B”)  
Package “G”  
(or “D-5C”)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
Popular 1N6073US to 1N6081US series  
Voidless hermetically-sealed glass package  
Extremely robust construction  
•
•
•
Ultrafast recovery rectifier series 50 to 150 V  
Military and other high-reliability applications  
Switching power supplies or other applications  
requiring extremely fast switching & low forward  
loss  
High forward surge current capability  
Low thermal resistance for higher power  
Triple-layer passivation  
Internal “Category I” Metallurgical bonds  
•
•
•
Options for screening in accordance with MIL-PRF-  
19500/503 for JAN, JANTX, JANTXV, or JANS by  
using a MQ, MX, MV or MSP prefix respectively , e.g.  
MX6076, MV6079, MSP6081, etc.  
Controlled avalanche with peak reverse power  
capability  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
•
Axial-leaded equivalents also available (see separate  
data sheet for 1N6073 thru 1N6081)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
Junction Temperature: -65oC to +155oC  
Storage Temperature: -65oC to +155oC  
•
•
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
Peak Forward Surge Current @ 25oC: 35 Amps for  
1N6073US-6075US, 75 Amps for 1N6076US-6078US,  
and 175 Amps for 1N6079US-6081US at 8.3 ms half-  
sine wave  
Average Rectified Forward Current (IO) at TEC= +70oC:  
1N6073US thru 1N6075US: 3.0 Amps  
1N6076US thru 1N6078US: 6.0 Amps  
1N6079US thru 1N6081US: 12.0 Amps  
Average Rectified Forward Current (IO) at TA=55oC:  
1N6073US thru 1N6075US: 0.85 Amps  
1N6076US thru 1N6078US: 1.3 Amps  
1N6079US thru 1N6081US: 2.0 Amps  
TERMINATIONS: End caps are Copper with  
Tin/Lead (Sn/Pb) finish. Note: Previous inventory  
had solid Silver end caps with Tin/Lead finish.  
•
•
•
•
MARKING: None  
•
POLARITY: Cathode indicated by band  
Tape & Reel option: Standard per EIA-481-B  
Weight: 1N6073 thru 1N6075: 193 mg  
1N6076 thru 1N6078: 539 mg  
1N6079 thru 1N6081: 1100 mg  
•
See package dimensions and recommended pad  
layouts on last page for all three package sizes  
•
•
Thermal Resistance (RθJEC): 13oC/W for 1N6073US-  
6075US, 8.5oC/W for 1N6076US-6078US, and  
5.0oC/W for 1N6079US-6081US  
Solder temperature: 260oC for 10 s (maximum)  
Copyright © 2007  
1-17-2007 REV C  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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 		Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon, HERMETIC SEALED, GLASS, G, MELF-2
MX6080 MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN
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 		Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon, HERMETIC SEALED, GLASS, G, MELF-2

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