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MX6076 PDF预览

MX6076

更新时间： 2024-11-05 06:36:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 快速恢复能力电源超快恢复二极管快速恢复二极管超快速恢复能力电源
页数 文件大小 规格书
3页 352K
描述
Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, HERMETIC SEALED, GLASS, E, 2 PIN

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MX6076 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：O-LALF-W2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.76
其他特性：METALLURGICALLY BONDED, HIGH RELIABILITY应用：ULTRA FAST RECOVERY POWER
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：O-LALF-W2JESD-609代码：e0
最大非重复峰值正向电流：75 A元件数量：1
相数：1端子数量：2
最高工作温度：155 °C最低工作温度：-65 °C
最大输出电流：6 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大反向恢复时间：0.03 µs表面贴装：NO
端子面层：TIN LEAD端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MX6076 数据手册

 浏览型号MX6076的Datasheet PDF文件第2页浏览型号MX6076的Datasheet PDF文件第3页 
1N6073 thru 1N6081  
VOIDLESS HERMETICALLY SEALED  
ULTRA FAST RECOVERY GLASS  
POWER RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-  
19500/503 and is ideal for high-reliability applications where a failure cannot be  
tolerated. These industry-recognized 3, 6, and 12 Amp rated rectifiers (TL =70ºC) in  
different package sizes for working peak reverse voltages from 50 to 150 volts are  
hermetically sealed with voidless-glass construction using an internal “Category I”  
metallurgical bond. These devices are also available in surface mount MELF  
package configurations by adding a “US” suffix (see separate data sheet for  
1N6073US thru 1N6081US). Microsemi also offers numerous other rectifier  
products to meet higher and lower current ratings with various recovery time speed  
requirements including standard, fast and ultrafast device types in both through-hole  
and surface mount packages.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
Popular JEDEC registered 1N6073 to 1N6081 series  
Voidless hermetically sealed glass package  
Extremely robust construction  
Triple-layer passivation  
Internal “Category I” Metallurgical bonds  
•
Ultrafast recovery rectifier series 50 to 150 V  
•
•
Military and other high-reliability applications  
Switching power supplies or other applications  
requiring extremely fast switching & low forward  
loss  
•
•
High forward surge current capability  
Low thermal resistance  
JAN, JANTX, and JANTXV available for 1N6074 and  
1N6075 per MIL-PRF-19500/503  
•
Controlled avalanche with peak reverse power  
•
Further options for screening in accordance with MIL-  
PRF-19500 for JAN, JANTX, JANTXV, or JANS by  
using a MQ, MX, MV or MSP prefix respectively , e.g.  
MX6076, MV6079, MSP6081, etc.  
capability  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
•
Surface mount equivalents also available in a square  
end-cap MELF configuration with “US” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
Junction Temperature: -65oC to +155oC  
•
•
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
•
•
Storage Temperature: -65oC to +155oC  
Peak Forward Surge Current @ 25oC: 35 Amps for  
1N6073-6075, 75 Amps for 1N6076-6078, and 175  
Amps for 1N6079-6081 at 8.3 ms half-sine wave  
TERMINATIONS: Axial-leads are Copper with  
Tin/Lead (Sn/Pb) finish  
•
•
•
•
MARKING: Body painted and part number, etc.  
POLARITY: Cathode indicated by band  
Tape & Reel option: Standard per EIA-296  
Weight: 1N6073 thru 1N6075: 340 mg  
1N6076 thru 1N6078: 750 mg  
1N6079 thru 1N6081: 1270 mg  
See package dimensions on last page  
•
Average Rectified Forward Current (IO) at TL= +70oC  
(L= 0 inch from body):  
1N6073 thru 1N6075: 3.0 Amps  
1N6076 thru 1N6078: 6.0 Amps  
1N6079 thru 1N6081: 12.0 Amps  
Average Rectified Forward Current (IO) at TA=55oC:  
1N6073 thru 1N6075: 0.85 Amps  
1N6076 thru 1N6078: 1.3 Amps  
1N6079 thru 1N6081: 2.0 Amps  
•
•
•
Thermal Resistance L= 0 inch (RθJL): 13oC/W for  
1N6073-6075, 8.5oC/W for 1N6076-6078, and  
5.0oC/W for 1N6079-6081  
Solder temperature: 260oC for 10 s (maximum)  
Copyright 2004  
Microsemi  
Page 1  
12-08-2004 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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MX6076US MICROSEMI

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MX6077 MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, HERMETIC SEALED, GLASS, E, 2 PIN
MX6077US MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 1.3A, Silicon, HERMETIC SEALED, GLASS, E, MELF-2
MX6078 MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, HERMETIC SEALED, GLASS, E, 2 PIN
MX6078US MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 1.3A, Silicon, HERMETIC SEALED, GLASS, E, MELF-2
MX6079 MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN
MX6079US MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon, HERMETIC SEALED, GLASS, G, MELF-2
MX6080 MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN
MX6080US MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon, HERMETIC SEALED, GLASS, G, MELF-2
MX6081 MICROSEMI

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 		Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN

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