Datasheet > MX29LV800CTXHC-70

MX29LV800CTXHC-70

更新时间： 2024-11-23 03:14:31

品牌	Logo	应用领域
旺宏电子 - Macronix		存储
页数	文件大小	规格书
69页	784K
描述
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MX29LV800CTXHC-70 数据手册

浏览型号MX29LV800CTXHC-70的Datasheet PDF文件第2页

浏览型号MX29LV800CTXHC-70的Datasheet PDF文件第3页

浏览型号MX29LV800CTXHC-70的Datasheet PDF文件第4页

浏览型号MX29LV800CTXHC-70的Datasheet PDF文件第5页

浏览型号MX29LV800CTXHC-70的Datasheet PDF文件第6页

浏览型号MX29LV800CTXHC-70的Datasheet PDF文件第7页

MX29LV800C T/B

8M-BIT[1Mx8/512Kx16]CMOSSINGLEVOLTAGE

3VONLYFLASHMEMORY

FEATURES

• Extended single - supply voltage range 2.7V to 3.6V

• 1,048,576 x 8/524,288 x 16 switchable

• Singlepowersupplyoperation

• Ready/Busy# pin (RY/BY#)

-Providesahardwaremethodofdetectingprogramor

eraseoperationcompletion

- 3.0V only operation for read, erase and program

operation

• Fast access time: 45R/55R/70/90ns

• Lowpowerconsumption

• Sectorprotection

- Hardware method to disable any combination of

sectors from program or erase operations

-Temporarysectorunprotectedallowscodechanges

in previously locked sectors.

- 30mA maximum active current

- 0.2uA typical standby current

• Commandregisterarchitecture

• CFI (Common Flash Interface) compliant

- Flash device parameters stored on the device and

provide the host system to access

• 100,000minimumerase/programcycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Package type:

- Byte/word Programming (9us/11us typical)

- Sector Erase (Sector structure 16K-Bytex1,

8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)

• FullycompatiblewithMX29LV800BT/BBdevice

• Auto Erase (chip & sector) and Auto Program

-Automaticallyeraseanycombinationofsectorswith

Erase Suspend capability

- Automatically program and verify data at specified

address

- 44-pin SOP

- 48-pin TSOP

• Erasesuspend/EraseResume

- 48-ball CSP (6 x 8mm)

- Suspends sector erase operation to read data from,

orprogramdatato,any sectorthatisnotbeingerased,

then resumes the erase

- 48-ball CSP (4 x 6mm)

- All Pb-free devices are RoHS Compliant

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

• Status Reply

- Data# polling & Toggle bit for detection of program

anderaseoperationcompletion

• 10 years data retention

GENERAL DESCRIPTION

The MX29LV800C T/B is a 8-mega bit Flash memory

organized as 1M bytes of 8 bits or 512K words of 16

bits. MXIC's Flash memories offer the most cost-effec-

tive and reliable read/write non-volatile random access

memory. The MX29LV800C T/B is packaged in 44-pin

SOP, 48-pinTSOP, and 48-ball CSP. It is designed to be

reprogrammed and erased in system or in standard

EPROM programmers.

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29LV800C T/B uses a 2.7V~3.6V VCC

supply to perform the High Reliability Erase and auto

Program/Erase algorithms.

The standard MX29LV800C T/B offers access time as

fast as 45ns, allowing operation of high-speed micropro-

cessors without wait states. To eliminate bus conten-

tion, the MX29LV800C T/B has separate chip enable

(CE#) and output enable (OE#) controls.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamperes on

address and data pin from -1V to VCC + 1V.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV800CT/B uses a command register to manage

this functionality. The command register allows for 100%

P/N:PM1183

REV. 1.4, APR. 24, 2006

12 3 4 5 6 7...69

中文翻译

下载PDF

与MX29LV800CTXHC-70相关器件

型号	品牌	获取价格	描述	数据表
MX29LV800CTXHC-70G	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV800CTXHC-90	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV800CTXHC-90G	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV800CTXHI-55Q	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV800CTXHI-55R	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV800CTXHI-70	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV800CTXHI70G	Macronix	获取价格	SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV800CTXHI-70G	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV800CTXHI-90	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV800CTXHI-90G	Macronix	获取价格	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

与MX29LV800CTXHC-70相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

MX29LV800CTXHC-70

MX29LV800CTXHC-70 数据手册

与MX29LV800CTXHC-70相关器件

与MX29LV800CTXHC-70相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MX29LV800CTXHC-70

MX29LV800CTXHC-70 数据手册

与MX29LV800CTXHC-70相关器件

与MX29LV800CTXHC-70相关文章

您还可以找

您在本页遇到什么问题？